Sb2S3 and Sb3Se3 as Next Generation Low Loss Phase Change Materials for Photonic Applications

Delaney, Matthew; Zeimpekis, Ioannis; Lawson, Daniel; Hewak, D.W.; Muskens, Otto L.

doi:10.1364/noma.2020.noth2c.3

Cited by 2 publications

(3 citation statements)

References 5 publications

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“…Comparing these two materials, Sb 2 S 3 has lower losses in general, but it has issues where the crystallization is not homogeneous, and the damage threshold is close to the crystallization temperature. On the other hand, the Sb 2 Se 3 has a larger real refractive index ∆ n (i.e., stronger light confinement), and a higher durability of phase switching, [ 120 ] providing promising features. Whilst these new types of PCMs have attractive characteristics, detailed studies are needed to investigate their capability for integrated optical switches.…”

Section: Conclusion and Discussionmentioning

confidence: 99%

A Review of Silicon‐Based Integrated Optical Switches

Chen

Lin

Wang

2023

Laser & Photonics Reviews

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Recently, silicon‐integrated optical circuits have attracted intensive interests, thanks to the compatibility with the complementary metal‐oxide‐semiconductor (CMOS) technology that enables mass production at low cost. The optical switch is an essential part of optical integrated circuits, with broad applications in optical communications and networks, optical computing, and sensing such as LiDAR. In general, the silicon‐integrated optical switch adopts thermo‐optic or carrier dispersion effect to realize reconfigurable signal routing. However, the use of thermo‐optic effect leads to high power consumption, and the carrier dispersion effect has the disadvantage of small refractive index change. In addition, both effects are non‐latching, and hence, continuous power consumption is required even when switching is not needed. For overcoming these drawbacks, phase‐change materials (PCMs) have been introduced into silicon‐integrated optical switches. In this paper, silicon‐integrated optical switches are classified according to the underlying structure and recent research is reviewed. Recent studies on silicon‐integrated optical switches incorporating PCMs are also reviewed. Furthermore, the pros and cons of different types of integrated optical switches with and without PCMs are compared and discussed.

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Section: Conclusion and Discussionmentioning

confidence: 99%

A Review of Silicon‐Based Integrated Optical Switches

Chen

Lin

Wang

2023

Laser & Photonics Reviews

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“…Therefore, other chalcogenides PCMs, such as antimony sulfide, Sb 2 S 3 , or antimony selenide,Sb 2 Se 3 , with an optical bandgap at optical frequencies, are being explored as low-loss PCMs to be integrated into reconfigurable optical devices. [18][19][20][21][22] In this study, we pioneer the investigation of the layered monochalcogenide gallium monosulphide, GaS, as a low-loss PCM in both crystalline and amorphous phases. We experimentally demonstrate a reversible amorphous-to-crystalline and vice versa transition of GaS with a sufficiently high index contrast Δn ≈0.5 while maintaining negligible losses in the optical telecommunication band.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Layered Gallium Monosulfide as Phase‐Change Material for Reconfigurable Nanophotonic Components On‐Chip

Gutiérrez,

Dicorato,

Ovvyan

et al. 2023

Advanced Optical Materials

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The demand for information processing at ultrahigh speed with large data transmission capacity is continuously rising. Necessary building blocks for on‐chip photonic integrated circuits (PICs) are reconfigurable integrated low‐loss high‐speed modulators and switches. Phase change materials (PCMs) provide unique opportunities for integration into PICs. Here, the investigation of layered gallium monosulfide (GaS) as a novel low‐loss PCM from infrared to optical frequencies is pioneered, with high index contrast (Δn ≈0.5) at the optical telecommunication band. The GaS bandgap switches from 1.5 ± 0.2 eV for the amorphous state to 2.1 ± 0.1 eV for the crystalline state. It is demonstrated that the reversible GaS amorphous‐to‐crystalline phase transition can be operated thermally and by picosecond green (532 nm) laser irradiation. The design of a reconfigurable integrated optical modulator on‐chip based on Mach‐Zehnder Interferometers (MZI) with the GaS PCM cell deposited on one of the arms for application is presented at the telecommunication wavelength of λ = 1310 nm, where the standard single mode optical fiber exhibits zero chromatic dispersion, and at λ = 1550 nm, where a minimum optical loss of 0.22 dB km−1 is obtained. This opens the route to applications such as reconfigurable modulators, beam steering using phase modulation, and photonic neural networks.

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Sb2S3 and Sb3Se3 as Next Generation Low Loss Phase Change Materials for Photonic Applications

Abstract: Sb2S3 and Sb3Se3 are phase change materials with extremely low losses in both states. They provide an attractive alternative to GST in reconfigurable photonic circuits and open new avenues for both phase and amplitude modulation.

Cited by 2 publications

References 5 publications

A Review of Silicon‐Based Integrated Optical Switches

A Review of Silicon‐Based Integrated Optical Switches

Layered Gallium Monosulfide as Phase‐Change Material for Reconfigurable Nanophotonic Components On‐Chip

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