Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes

Chu, Sheng; Lim, Jae‐Hong; Mandalapu, L. J.; Zheng, Youdou; Li, L.; Liu, J. L.

doi:10.1063/1.2908968

Cited by 137 publications

(84 citation statements)

References 24 publications

(17 reference statements)

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“…therein). In the case of Sb, following the report of Sb-doped p-type ZnO by Aoki et al in 2002 [2] and further work by other authors [3][4][5][6], recently the realization of a wide range of optoelectronic devices incorporating pZnO:Sb layers have been reported, including homo-and heterojunction photodiodes [7][8], ultraviolet (UV) light emitting diodes (LEDs) [9][10][11][12], and UV lasers [13].While technological applications of p-type ZnO seem thus to have come within reach, the nature of the acceptors in P, As or Sb-doped ZnO continues to be disputed in the literature. From a simple viewpoint of chemical bonding, the substitution of O 2− cations in ZnO by P 3− , As 3− or Sb 3− should create fully ionized acceptors.…”

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confidence: 99%

Direct evidence for Sb as a Zn site impurity in ZnO

Wahl

Correia

Mendonça

et al. 2009

Applied Physics Letters

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The lattice location of ion implanted antimony in zinc oxide has been determined by means of β − emission channeling from the radioactive 124 Sb isotope. Following 30 keV implantation of 124 Sb into a single-crystalline ZnO sample to a fluence of 1×10 14 cm −2 , the angular-dependent emission rate of β − particles around several crystallographic directions was measured with a position-sensitive Si detector. The majority of Sb was found to occupy Zn sites, with the possible fraction on O sites being at maximum 5-6%. To date, the group V element antimony is one of the elements which have been used as p-type dopants in the II-VI semiconductor zinc oxide, the others being N, P and As (cf. Ref.[1] and Refs. therein). In the case of Sb, following the report of Sb-doped p-type ZnO by Aoki et al in 2002 [2] and further work by other authors [3][4][5][6], recently the realization of a wide range of optoelectronic devices incorporating pZnO:Sb layers have been reported, including homo-and heterojunction photodiodes [7][8], ultraviolet (UV) light emitting diodes (LEDs) [9][10][11][12], and UV lasers [13].While technological applications of p-type ZnO seem thus to have come within reach, the nature of the acceptors in P, As or Sb-doped ZnO continues to be disputed in the literature. From a simple viewpoint of chemical bonding, the substitution of O 2− cations in ZnO by P 3− , As 3− or Sb 3− should create fully ionized acceptors. However, due to the large mismatch of the ionic radii of P 3− (2.12 Å), As 3− (2.22 Å) and Sb 3− (2.45 Å) with the ionic radius of O 2− (1.38 Å) it was argued that those impurities should have a low solubility substituting for O [14]. Moreover, theory suggests that the energy levels of P, As and Sb replacing O are located deep in the band gap of ZnO [15][16]. In order to explain the p-type character of ZnO following As and Sb doping it was suggested that the acceptor action is actually due to As Zn -2V Zn or Sb Zn -2V Zn complexes, where an As or Sb atom occupies a Zn "anti-site" and is decorated with two Zn vacancies [16][17][18][19]. However, a complex acceptor model for P, As or Sb in ZnO is strongly disputed by some authors [20][21][22][23][24].Obviously knowledge on the lattice location of the group V elements in ZnO is crucial in order to assess the related mechanism of p-type doping. We have previously determined the lattice sites of ion implanted As by means of conversion electron emission channeling from radioactive 73 As [25][26][27] and found that As does not occupy substitutional O sites but mostly substitutional Zn sites. In this work we report on the lattice location of ion implanted radioactive 124 Sb (t 1/2 = 60.3 d) using β − emission channeling and we present direct experimental evidence that Sb preferentially occupies Zn sites. Emission channeling [28] is based on the fact that charged particles from nuclear decay (α, β − , β + , conversion electrons) experience channeling or blocking effects along major crystallographic axes and planes. The resulting anisotropic emission yield p...

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confidence: 99%

Direct evidence for Sb as a Zn site impurity in ZnO

Wahl

Correia

Mendonça

et al. 2009

Applied Physics Letters

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“…The covalent bond lengths of Ga-O are slightly smaller than that of Zn-O, which will make the deformation of the ZnO lattice small even in the case of high Ga concentration [3]. Different authors have also reported the synthesis of Ga doped ZnO [4, 5,6,7]. In all these reports, the synthesis was performed via time consuming, expensive procedures.…”

Section: Introductionmentioning

confidence: 99%

Optical and Morphological Studies of Ga Doped Zno Nanocrystals

George¹

2017

IOSR JAC

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“…Sb as p-type dopant in ZnO has recently attracted considerable attention due to the wide range of optoelectronic devices that have been fabricated using MBE [30][31][32][33][34][35] or MOCVD 36 grown layers. While the first report 37 of Sb-doped p-type ZnO using excimer laser processing dates back to 2002, the introduction of MBE growth for Sb doping followed later [38][39][40] , pursued by pulsed laser deposition 41 and thermal oxidation 42 .…”

Section: Introductionmentioning

confidence: 99%

“…While the first report 37 of Sb-doped p-type ZnO using excimer laser processing dates back to 2002, the introduction of MBE growth for Sb doping followed later [38][39][40] , pursued by pulsed laser deposition 41 and thermal oxidation 42 . The impressive list of devices based on p-ZnO:Sb layers now includes homo-and heterojunction photodiodes 30,31 , UV LEDs [32][33][34]36 , and UV lasers 35 .…”

Section: Introductionmentioning

confidence: 99%

Lattice location of the group V elements Sb, As, and P in ZnO

Wahl¹,

Correia

Mendonça³

et al. 2010

Oxide-Based Materials and Devices

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Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes 124 Sb, 73As and 33 P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or Sb Zn −2V Zn , As Zn −2V Zn or P Zn −2V Zn complexes (as suggested in the literature) are responsible for the acceptor action. However, the fact that the implanted group V ions prefer the substitutional Zn sites is clearly a strong argument in favour of the complex acceptor model, while it discourages the notion that Sb, As and P act as simple "chemical" acceptors in ZnO.

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Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes

Cited by 137 publications

References 24 publications

Direct evidence for Sb as a Zn site impurity in ZnO

Direct evidence for Sb as a Zn site impurity in ZnO

Optical and Morphological Studies of Ga Doped Zno Nanocrystals

Lattice location of the group V elements Sb, As, and P in ZnO

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