Sb-doped GeS<inf>2</inf> as performance and reliability booster in Conductive Bridge RAM

Abstract

In this work, for the first time at our k improvement of chalcogenide-based CBRAM and reliability by Sb doping of the GeS 2 presented. An original analysis, based on in-d chemical characterization, device electrical m empirical model and first principle calculations argue that optimized ~10% Sb doping in the G allows to achieve SET speed of 30ns at 2.2V (i programming power), while assuring 10 years at 125°C, >10 5 cycling and high robustness to S profile. Finally, the improved thermal stability in the GeS 2 -Sb matrix is clearly elucidated molecular dynamics calculations.

Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al<inf>2</inf>O<inf>3</inf>/CuTeGe conductive bridge RAM (CBRAM)

“…The time evolution of the resistance follows a power low (Fig.15), with a parameter ν that quantifies the retention loss rate [5]. The higher the ν value, the worse the retention.…”

“…Conductive Bridging RAM (CBRAM) are envisaged as a promising candidate for future memory generations, due to their high speed, low voltage, low consumption and ease of integration in the back end of a logic process [1][2][3][4][5]. New CBRAM generations use an oxide as electrolyte and a Cubased active electrode in order to improve the thermal stability (i.e.…”

90nm W\Al<inf>2</inf>O<inf>3</inf>\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation

“…While CBRAM cells typically comprise chalcogenide materials, either as electrolyte [3][4][5] or cation-supply element [6], we previously reported promising CBRAM properties using a CMOS-friendly Al 2 O 3 insulating layer sandwiched between a W plug and a Cu-supply element [7]. In this paper we engineer a TiW alloy inserted at the interface between pure Cu and the Al 2 O 3 electrolyte in order to strongly limit the Cu in-diffusion, preserving the cell integrity after back-end-of-line (BEOL) processing at 400°C.…”

On disturb immunity and P/E kinetics of Sb-doped GeS<inf>2</inf>/Ag conductive bridge memories

“…However, the high temperature data-retention and robustness to the soldering profile remain significant roadblocks to be overcome to allow CBRAM pervasion in the market. Improved data-retention has been obtained recently for GeS 2 -based devices [2], [3], among which Sb doping even showed better SET characteristics [3]. However, disturb and RESET performances were not addressed yet.…”