Saturation of the High-Temperature Normal-State Electrical Resistivity of Superconductors

Fisk, Z.; Webb, G.W.

doi:10.1103/physrevlett.36.1084

Cited by 337 publications

(146 citation statements)

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“…No consensus was reached, however, and the interest turned to other problems. (Wang et al, 1996ab), La1.93Sr0.07CuO4 (Takagi et al, 1992), Nd1.84Ce0.16Cu4−y (Tc = 22.5 K) (Hikada and Suzuki, 1989), YBa2Cu3O6+x (Tc = 60 K) (Orenstein et al, 1990), Bi2Sr2Cu6+y (Tc = 6.5 K) (Martin et al, 1990) and Nb3Sb (Fisk and Webb, 1976). The arrow shows the Ioffe-Regel resistivity of La1.93Sr0.07CuO4.…”

Section: Introductionmentioning

confidence: 99%

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Colloquium: Saturation of electrical resistivity

Calandra²,

2003

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Resistivity saturation is observed in many metallic systems with large resistivities, i.e., when the resistivity has reached a critical value, its further increase with temperature is substantially reduced. This typically happens when the apparent mean free path is comparable to the interatomic separations -the Ioffe-Regel condition. Recently, several exceptions to this rule have been found. Here, we review experimental results and early theories of resistivity saturation. We then describe more recent theoretical work, addressing cases both where the Ioffe-Regel condition is satisfied and where it is violated. In particular we show how the (semiclassical) Ioffe-Regel condition can be derived quantum-mechanically under certain assumptions about the system and why these assumptions are violated for high-Tc cuprates and alkali-doped fullerides.

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Section: Introductionmentioning

confidence: 99%

“…(Fisk and Webb, 1976) and Nb (Abraham and Deviot, 1972). The figure also shows the the Ioffe-Regel (Ioffe and Regel, 1960) saturation resistivities of Nb3Sb and Nb, setting the mean free path l in Eq.…”

Section: Introductionmentioning

confidence: 99%

Colloquium: Saturation of electrical resistivity

Calandra²,

2003

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“…Coherently with this picture, A15 materials show a pronounced deviation of ρ(T ) from the linear behavior at high temperature when the mean free path is expected to become comparable with the inter-atomic distance. 3 However, both in cuprates and in alkali-doped fullerenes the theoretical prediction of the resistivity saturation at the IoffeRegel limit seems to fail. 4,5 Experimental measurements in lightly doped cuprates show a resistivity greater than the saturation value ρ sat estimated by the simple quasiparticle picture, 4,6,7 and also transport measurements in the alkali-doped compounds would predict at high temperatures a mean free path smaller than the intermolecular distance.…”

Section: Introductionmentioning

confidence: 99%

Transport properties in correlated systems: An analytical model

2005

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Several studies have so far investigated transport properties of strongly correlated systems. Interesting features of these materials are the lack of resistivity saturation well beyond the Mott-IoffeRegel limit and the scaling of the resistivity with the hole density in underdoped cuprates. Due to the strongly correlated nature of these materials, mainly numerical techniques have been employed. A key role in this regards is thought to be played by the continuous transfer of spectral weight from coherent to incoherent states. In this paper we employ a simple analytical expression for the electronic Green's function to evaluate both quasi-particle and transport properties in correlated systems. Our analytical approach permits to enlighten the specific role of the spectral transfer due to the correlation on different features. In particular we investigate the dependence of both quasi-particle and transport scattering rate on the correlation degree and the criterion for resistivity saturation.

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“…According to the loffe-Regel criterion [2] the MFP values cannot decrease below a, so that the Bloch-Boltzmann theory based on the nearly-free-electron (NFE) model is no longer valid for such materials. On the other hand the fact that the MFP may attain its minimum value in the case of highly resistive conductors was used in the works by Mooij [1] and then by Fisk and Webb [3] [4]. In this model the conductor resistivity depends on the ideal resistivity Pi(T) derived from the BlochBoltzmann theory and the saturated resistivity p * This model was substantiated by Gurvitch [5] who also showed that the saturated resistivity p * depends on the electron concentration n as follows By using compiled experimental data Tsuei [6] It should be emphasized that the shunt resistance model is a rather simplified approach to the problem of anomalies in electrical properties of highly resistive conductors.…”

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confidence: 99%

“…Point C indicates the resistivity value of the film cooled to room temperature. Next annealing series (2)(3)(4)(5)(6) which are marked with different symbols led to the irreversible resistivity increase and the decrease of d p /dT value. The film attained the negative TCR value after the final annealing series (6).…”

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confidence: 99%

Resistivity saturation effect in thin V-Al alloy films

Stolecki

1989

J. Phys. France

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Resistivity saturation effect in thin V-Al alloy films B. StoleckiTo cite this version: Abstract. 2014 The resistivity of the V-Al alloy films of various thicknesses and compositions was studied as a function of temperature. The films were evaporated using an electron gun in a vacuum of 10-5 Pa onto quartz substrates held at room temperature. The resistivity measurements were carried out in situ in vacuum of 10-8-10-6 Pa in the temperature range 300-830 K. It was found that the resistivity dependence on temperature was anomalous, i.e., the resistivity saturation effect occurred. An analysis of this effect was performed on the basis of the shunt resistance model. J. Phys. France 50 (1989)

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Saturation of the High-Temperature Normal-State Electrical Resistivity of Superconductors

Cited by 337 publications

References 9 publications

Colloquium: Saturation of electrical resistivity

Colloquium: Saturation of electrical resistivity

Transport properties in correlated systems: An analytical model

Resistivity saturation effect in thin V-Al alloy films

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