1977
DOI: 10.1016/0375-9601(77)90558-8
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Saturation of the dielectric absorption of vitreous silica at low temperatures

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Cited by 88 publications
(81 citation statements)
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“…At temperatures much below the superconducting critical temperature, T c , these mechanisms saturate. When lowering the temperature beyond this saturation a further change in both Q and center frequency is observed, which is well described in the theory of TLFs [16] [17], by modeling a single TLF as a dipole that can shift states in an asymmetric well by thermally activated tunneling or absorption of resonant photons. The former effect leads to a change in the center frequency while the latter manifests as a power dependent Q.…”
mentioning
confidence: 65%
“…At temperatures much below the superconducting critical temperature, T c , these mechanisms saturate. When lowering the temperature beyond this saturation a further change in both Q and center frequency is observed, which is well described in the theory of TLFs [16] [17], by modeling a single TLF as a dipole that can shift states in an asymmetric well by thermally activated tunneling or absorption of resonant photons. The former effect leads to a change in the center frequency while the latter manifests as a power dependent Q.…”
mentioning
confidence: 65%
“…This effect with TLSs was fi rst observed by Schickfus and Hunklinger, who used a superconducting cavity resonator to measure the dielectric absorption of vitreous silica. 50 More recently, in the context of studying loss mechanisms relevant to superconducting qubits, Martinis et al used a lumped-element LC resonator to measure the loss tangent of chemical vapor-deposited SiO 2 and SiN x dielectrics at low temperature and variable power. 43 Both showed a decrease in tan δ with increasing power, but over the entire range studied, the SiN x loss was about 30 times lower (see Figure 5 ).…”
Section: What Resonators Can Tell Us About Materials and Fabricationmentioning
confidence: 99%
“…Substrate micromachining has also been used to reduce dielectric loss and frequency noise in niobium titanium nitride coplanar waveguide resonators on silicon 16,17 . On the other hand, silicon has a more complex surface chemistry than sapphire; for example, it forms an amorphous oxide layer a) Electronic mail: yiwen.chu@yale.edu that may be host to a large number of TLS's and paramagnetic impurities 11,18,19 .We suspend our qubits with a simple, one-step deep reactive ion etch (DRIE) using the BOSCH process that does not require any additional steps to mask or protect the devices 16,20,21 . We begin with high resistivity (100) silicon wafers (ρ > 10 4 Ω·cm) and fabricate aluminum 3D transmon qubits using the standard Dolan bridge doubleangle deposition technique 22 .…”
mentioning
confidence: 99%
“…Substrate micromachining has also been used to reduce dielectric loss and frequency noise in niobium titanium nitride coplanar waveguide resonators on silicon 16,17 . On the other hand, silicon has a more complex surface chemistry than sapphire; for example, it forms an amorphous oxide layer a) Electronic mail: yiwen.chu@yale.edu that may be host to a large number of TLS's and paramagnetic impurities 11,18,19 .…”
mentioning
confidence: 99%