Saturation behavior and self-phase modulation of picosecond pulses in single-stripe and tapered semiconductor laser amplifiers

Gehrig, Edeltraud; Woll, D.; Tremont, M.A.; Robertson, A.; Wallenstein, R.; Hess, Ortwin

doi:10.1364/josab.17.001452

Cited by 9 publications

(6 citation statements)

References 13 publications

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“…The short pulse duration can be explained by the large nonlinear attenuation (20% to 30%) of the MQW, as compared to the fraction of a percent used in conventional solid-state femtosecond lasers. The use of dispersion compensation should enable us to achieve shorter pulse durations since it will compensate to some degree the high self-phase modulation inside the semiconductor [12] and the dispersion from all the other cavity elements. Reduction of pulse duration by 30% in a semiconductor laser has previously been reported by using gratings [13] for dispersion management inside and outside the cavity.…”

Section: Resultsmentioning

confidence: 99%

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Schmitt-Sody

Velten

Liu

et al. 2008

Research Letters in Optics

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We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth) and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

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Section: Resultsmentioning

confidence: 99%

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Schmitt-Sody

Velten

Liu

et al. 2008

Research Letters in Optics

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“…The optical injection of a laser signal into the semiconductor laser amplifier is taken into account through appropriate boundary conditions. 23 For the numerical integration of the system of partial differential equations for the light fields, the Hopscotch method 24 is used as a general scheme. At every spatial location, it is self-consistently coupled and solved with the microscopic equations for the carrier and polarization Wigner distributions and the temperature equations of the lattice and the plasma.…”

Section: Theorymentioning

confidence: 99%

Femtosecond dynamics of active semiconductor waveguides: microscopic analysis and experimental investigations

et al. 2004

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We present theoretical and experimental results of nonlinear amplification and propagation of short optical pulses in Fabry-Perot semiconductor lasers. The theoretical description is based on spatially resolved Maxwell-Bloch-Langevin equations that take into account the spatially varying light-field dynamics including counterpropagation, diffraction, self-focusing, and the microscopic carrier dynamics including carrier heating and carrier relaxation. Femtosecond pump-probe measurements using upconversion and femtosecondresolved pump-probe measurements and frequency-resolved optical gating on a Fabry-Perot laser allow a combined analysis of the transmitted pulses in real time and the spectral domain. The experimental results are compared with the microscopically calculated gain and index distributions, pulse shapes, and optical spectra. In order to assess the full potential of semiconductor lasers and amplifiers, a quantitative measurement and understanding of amplitude and phase dynamics is required. The computer simulations of the ultrashort dynamics of semiconductor waveguides with optical injection of light pulses provide insight into the dynamic spectral gain and index changes responsible for frequency drifts and self-phase modulation, visualization of propagation effects, and a time-and frequency-resolved analysis of the amplified light pulses.

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“…Semiconductor amplifiers for picosecond pulses have been the subject of numerous investigations 6,7,16,17,18 . The carrier dynamics is complex, with several processes occurring both at ultrafast (fs) and slow time scales ( § ns).…”

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confidence: 99%

“…2 can be reproduced, assuming reasonable values of E sat of 60-300 pJ, and τ c of 0.2-1 ns, no single combination of E sat and τ c reproduces all curves, based on the simple model of ref. 7. A detailed quantitative analysis of the experimental results would require taking into consideration the amplifier geometry and gain profile, carrier heating, ultrafast dynamics 16 , and pulse propagation effects 7,18 .…”

mentioning

confidence: 99%

“…7. A detailed quantitative analysis of the experimental results would require taking into consideration the amplifier geometry and gain profile, carrier heating, ultrafast dynamics 16 , and pulse propagation effects 7,18 . In particular, the fast decrease of gain for TL 25-fs pulses is attributed to smaller values of E sat resulting from the carrier heating dynamics 16 .…”

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confidence: 99%

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Tapered semiconductor amplifiers for optical frequency combs in the near infrared

Cruz

Stowe

2006

Opt. Lett.

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A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains over 17 dB (12 dB) are obtained for 1 mW (20 mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show subhertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplification. These amplifiers can be used to boost the infrared power in f-to-2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources with very limited power in the infrared.OCIS codes: 250.5980, 320.7130, 120.3930 Tapered semiconductor amplifiers (TSA) are known to provide large gains (≥ 20 dB) for near infrared continuouswave (cw) lasers, converting a few milliwatts of cw radiation to more than 1 W, without degradation in linewidth 1 . These amplifiers have been widely used in atomic spectroscopy 1,2,3 , laser cooling and trapping 4 , and for increasing the efficiency of nonlinear frequency conversion of cw lasers into the blue and UV regions 3,4,,5

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Saturation behavior and self-phase modulation of picosecond pulses in single-stripe and tapered semiconductor laser amplifiers

Cited by 9 publications

References 13 publications

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Femtosecond dynamics of active semiconductor waveguides: microscopic analysis and experimental investigations

Tapered semiconductor amplifiers for optical frequency combs in the near infrared

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