Saturated small-signal gain of Si quantum dots embedded in SiO2/SiOx/SiO2 strip-loaded waveguide amplifier made on quartz

Abstract

A SiO2/SiOx/SiO2 strip-loaded waveguide with buried Si quantum dots is optically pumped to provide amplified spontaneous emission centered at 805 nm with spectral linewidth of 140 nm. By top-pumping the 350-nm-thick SiOx with He–Cd laser of 40 mW at 325 nm, the optical gain of 65 cm−1 and loss coefficient of 5 cm−1 are determined. Under a 785 nm small-signal injection diagnosis, the power-dependent gain curve fitting with gain-saturated amplifier model reveals a peak gain of 27 dB (not including waveguide loss) and a net power gain of 9.5 dB for the Si-rich SiOx waveguide amplifier with a length of 5 mm.

Size effect on electronic transport in nC–Si/SiO core/shell quantum dots

“…Quantum confinement is known to alter the electrical conductivity in Si-NCs [9,10]. Possible applications in numerous other fields e.g., in photovoltaics [11], photodetectors [12], data storage [13] and optical waveguide [14] have also been demonstrated.…”

Optical gain from luminescent a-SiN<inf>x</inf>O<inf>y</inf> waveguide

“…The setup of a variable strip length (VSL) method and the measurement of amplified spontaneous emission (ASE) were reported in Ref. [9]. [14].…”

“…Recently, Lin et.al. reported the small-signal power gain of Si-QDs embedded in SiO 2 /SiO x /SiO 2 strip-loaded waveguide amplifier [9]. On the other hand, the optical gain from the direct gap transition of Ge-on-Si [10] and the monolithic Ge-on-Si lasers for integrated photonics [11] have been demonstrated.…”

Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

“…A conventional indium phosphide (InP) quantum well-based gain medium could be used, 13 but an InAs/GaAs QD gain medium gives unprecedented advantages, such as ultralow temperature dependence, 14 low-noise single cavity multiwavelength lasing, 15 and a wide tuning range. 16 The fabrication and optical properties of silicon QDs were also reported, including optical amplification [17][18][19] and all-optical modulation, 20 which are promising for integration with silicon photonics devices. The wafer bonding approach in Ref.…”