2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
DOI: 10.1109/mwsym.2002.1012182
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Sampling circuit on silicon substrate for frequencies beyond 50 GHz

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Cited by 3 publications
(4 citation statements)
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“…In this section, assume that the RF input signal is a 3rd order derivative 300 ps pulse width with a typical [3][4][5][6][7][8][9][10] GHz occuptation bandwidth. Its pulse shape is presented Fig.…”
Section: A Experimental Resultsmentioning
confidence: 99%
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“…In this section, assume that the RF input signal is a 3rd order derivative 300 ps pulse width with a typical [3][4][5][6][7][8][9][10] GHz occuptation bandwidth. Its pulse shape is presented Fig.…”
Section: A Experimental Resultsmentioning
confidence: 99%
“…In the frequency domain, this RF signal is equivalent to a several gigahertz occupation bandwidth B. Sampling at these frequencies requires new architecture [2], such as inter-digitalized ADC, one shot processing [3], optical systems [4], high speed diodes [5], [6], ... Nevertheless, since the pulses are repetitive, according to a fixed pulse repetition frequency FPRF, it is possible to recover the pulses shape, sampling them at a FS (sampling frequency) close to FPRF.…”
Section: Sub Sampling Receivermentioning
confidence: 99%
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“…For example, with a NAND gate, when the two inputs RADAR with high output peak voltage [1], sampling at INAand INBare both in low state, the output is "high". With millimeter waves with very short fall/rise times and duration a XOR gate, the output is high only when INA and INB are in [2], TDR/TDT at millimeter waves [3], and recently wireless different states, the PRF will be twice the INA INB inputs communications with specific pulse shape (FCC part 15 frequency (Fig. 1).…”
Section: A Principlementioning
confidence: 99%