Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

A complete RF power technology assessment for military applications

“…These shifts were not recovered after 6 days. The opposite variations for Idss and Gm, which was a little bit surprising according bibliography [3,5,8], was in fact a consequence of measurement conditions, where Gm was recorded at the same Vgs and not at its maximum. Actually, the curve Igs = f (Vgs) exhibited a permanent positive shift (as Vp) more important when the level of compression was strong, which explained the phenomenon (see figure 10), contrary to the most of references (but not all) in case of HCID effects.…”

“…Any on state or off state drain-source breakdown voltage characterizations [3,7,9] were made due to the small sampling size. So, we couldn't detect breakdown walkout.…”

“…So, we chose samples within specification limits which exhibited lowest drainsource breakdown voltages for their potential overdrive sensibility or lowest Idss for the weak power capability [3,7]. We performed a series of microsections in order to establish correlation between electrical characteristics and physical values (see figures 3 and 4).…”

Analysis and simulation of Si/GaAs/GaN MESFET to study the impact of localised charges on device performance

“…The development of microwave Gallium Arsenide Metal Semiconductor Field phones, and other electronic devices have replaced vacuum tubes devices at microwave frequencies. GaAs MESFET [4 ]- [6] has many advantages over Si MESFET such as higher electron mobility, shorter transit time, higher resistivity. But as GaAs has no native oxide thereby it limits the voltage that can be applied to the gate.…”

Numerical and experimental analysis of EMI effects on circuits with MESFET devices

“…The growth in the wireless communications market has prompted an increased demand for microwave communication elements such as GaAs MESFETs [1][2][3], high-electron mobility transistors (HEMT) [4][5][6] and hetero-junction bipolar transistors (HBT) [7][8][9] to support the implementation of high-speed optical fiber networks, satellite communications, wireless communication networks, and so on. GaAs elements are an essential component of many semiconductor devices and are used extensively in high-frequency circuits.…”