Safe Operating Area from Self-Heating, Impact Ionization, and Hot Carrier Reliability for a SiGe HBT on SOI

Kim, Jonggook; Sadovnikov, A.; Chen, Tianbing; Babcock, J.A.

doi:10.1109/bipol.2007.4351876

Cited by 8 publications

(4 citation statements)

References 2 publications

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“…4, the IV mismatch increases with V BE . Some previous work has demonstrated that the SiGe HBT stability in the bias range of 0.1mA/µm 2 is defined by a combined effect of thermal instability and impact ionization [4]. Base current reversal at constant V BE drive was tested to gauge the impact ionization of all DUTs.…”

Section: Device Technology and Experimentsmentioning

confidence: 99%

The thermal scaling: From transistor to array

Chen

Lee

Allum

et al. 2014

2014 IEEE Radio Frequency Integrated Circuits Symposium

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    The electrical and thermal performance scaling from transistor to array was studied in this paper to help improve the predictive modeling of the electricalthermal behavior of bipolar arrays. The dc and ac performance scales well at low bias but not to the medium and high bias because thermal resistance does not scale to the total emitter area. It is demonstrated that after the correction of the R TH in array models, the simulation can predict the electrical-thermal behavior of power arrays.

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Section: Device Technology and Experimentsmentioning

confidence: 99%

The thermal scaling: From transistor to array

Chen

Lee

Allum

et al. 2014

2014 IEEE Radio Frequency Integrated Circuits Symposium

Self Cite

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“…To operate the device in safe mode the self heating and breakdown analysis has to be performed which is called electro-thermal instability and it also important for large signal analysis. To control thermal instability due to high current operation in the device, self-heating characteristics need to be observed [6]. Initially the modelling parameters of Silvaco T-CAD tool are properly tuned to validate with experimental results of [7].…”

Section: Introductionmentioning

confidence: 99%

Self-Heating Effects in SiGe Heterojunction Bipolar Transistor with Different Ge Grading Profile

Jena*¹,

Panda²,

Dash³

2019

IJITEE

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A comparative account of self heating effect of four SiGe HBTs with different Ge grading profiles, designated as Hybrid Trapezoidal (HT), Symmetrically Triangular (ST), Linear Increasing (LI), and Conventional Trapezoidal (CT) with maximum Ge contents of 20%, is presented. Based on an experimentally validated model of the Silvaco TCAD tool, the properties of the four HBTs are simulated. It is observed that both self heating and local temperature increase due to higher device power dissipation. The effect of energy balance and non iso thermal energy balance effect is observed in SiGe HBT with different Ge base profile have been studied in terms of DC, AC, and RF performances and compared .

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“…Literature has elaborated extensively on the fundamental restrictions/ limitations of standard SOI substrates for high power applications [1][2][3][4][5]. Indeed, in standard SOI, a SiO 2 layer separates the top mono-crystalline Si layer (that hosts the active device where the electrical power is dissipated into heat) from the bottom Si body that provides mechanical support during wafer handling and a medium to conduct heat towards the heat sink.…”

Section: Introductionmentioning

confidence: 99%