S3-P10: Embedded microfluidic cooling of high heat flux electronic components

Ditri, John J.; McNulty, Michael; Igoe, Suzanne

doi:10.1109/lec.2014.6951565

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…This approach is also readily compatible with die designs that do not utilize the substrate backside enhancements. The designed palladium manifold is created using an additive, photolithographic deposition process that enables high design flexibility and complex internal microfluidic routing networks [30]. A GaN on-SiC thermal prototype die containing etched pins on the substrate, resistor heaters, and HEMTs, was attached to the palladium manifold and flow tested.…”

Section: A Icecooi High Performance Ganmentioning

confidence: 99%

Near-junction microfluidic thermal management of RF power amplifiers

Bar‐Cohen

Maurer

Sivananthan

2015

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

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While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research focused on reduction of near-junction thermal resistance through use of diamond substrates and convective and evaporative microfluidics. The options, challenges, and techniques associated with the development of this embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power am plifiers.

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Section: A Icecooi High Performance Ganmentioning

confidence: 99%

Near-junction microfluidic thermal management of RF power amplifiers

Bar‐Cohen

Maurer

Sivananthan

2015

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

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“…Miao et al [ 14 ] demonstrated a microfluidic silicon interposer based on microjet cooling for the thermal management of GaN device integration, with a chip-level heat flux greater than 500 W/cm 2 and a hotspot heat flux greater than 30 kW/cm 2 . Ditri et al [ 15 , 16 ] explored a microfluidic cooling method that combines a pin-fin structure and a microfluidic impingement microjet to achieve the cooling of GaN devices with a chip-level heat flux greater than 1 kW/cm 2 and a hotspot heat flux greater than 40 kW/cm 2 . The third option is chip-embedded cooling (CE-cool) ( Figure 1 c), where microchannels are etched directly onto the backside of the device substrate.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors

Song,

Chen,

Wang

et al. 2023

Micromachines

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Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance. In this paper, the advantages and disadvantages of the cooling performance of three cooling schemes: remote cooling (R-cool), near-chip cooling (NC-cool), and chip-embedded cooling (CE-cool) are compared. The influences of distinct geometric parameters and operating conditions on thermal resistance are investigated. The results show that the thermal resistances of NC-cool and CE-cool are almost the same as each other. Decreasing microchannel base thickness (hb) significantly increases the thermal resistance of CE-cool, and when its thickness is less than a critical value, NC-cool exhibits superior cooling performance than CE-cool. The critical thickness increases when decreasing the heat source pitch (Ph) and the convective heat transfer coefficient (hconv) or increasing the thermal conductivity of the substrate (λsub). Moreover, increasing Ph or λsub significantly improves the thermal resistance of three cooling schemes. Increasing hconv significantly decreases the thermal resistances of NC-cool and CE-cool while hardly affecting the thermal resistance of R-cool. The influence of the boundary thermal resistance (TBR) on the thermal resistance significantly increases at higher λsub and larger hconv.

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“…Presumably, during tightening also a bending moment is introduced. Altogether, this makes the retainer an interesting topic for optimization what is also eminent from the relatively large number of patents for alternative designs [3][4][5][6][7]. The cooling path between the electronics board and rack infrastructure is conduction based.…”

Section: Introductionmentioning

confidence: 99%

Improving Thermal Contact Conductance from Electronics Board to Rack Infrastructure

Terpstra

Wits

2018

2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

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This paper presents experimental results of thermal contact conductance between an electronics board and rack infrastructure. For line replaceable units using liquid conduction cooling, the baseplate-cold plate interface introduces a critical thermal resistance. Using a dedicated experimental set-up that measures temperature gradients across such interfaces, this study systematically analyses key design parameters, such as surface roughness, contact pressure, coatings, such as nickel and tin plating, and the application of indium as thermal interface material. Limitations of theoretical models are addressed demonstrating the importance of experimental testing. Empirical results of this study show that cold plate plating and the use of indium have the most impact on the interface heat transfer coefficient. The presented results enable design engineers to improve thermal contact conductance thereby extending the range of liquid conduction cooling for cases in which electronics boards are clamped into a rack infrastructure. September 2018, Stockholm / SE www.therminic2018.eu (( 24 th INTERNATIONAL WORKSHOP on Thermal Investigations of ICs and Systems )) 2018

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S3-P10: Embedded microfluidic cooling of high heat flux electronic components

Cited by 13 publications

References 3 publications

Near-junction microfluidic thermal management of RF power amplifiers

Near-junction microfluidic thermal management of RF power amplifiers

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors

Improving Thermal Contact Conductance from Electronics Board to Rack Infrastructure

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