S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties

Seredin, P. V.; Buylov, Nikita; Goloshchapov, D. L.; Ivkov, Sergey A.; Matyukhina, E.P.; Arsentyev, I. N.; Nashchekin, A. V.; Sharofidinov, Sh. Sh.; Mizerov, A. M.; Pirogov, E. V.; Sobolev, M. S.

doi:10.1016/j.optmat.2022.112507

Cited by 8 publications

(6 citation statements)

References 45 publications

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“…The quality degraded as the composition changed to either the higher or lower side, probably because of the increase in lattice mismatch toward the SAM substrate. [27][28][29] (RSM) image of the sample with 17% indium. While InGaN had approximately the same in-plane lattice constant as SAM, it was grown relaxed on GaN, which may be the reason for the low crystalline quality because the lattice mismatch between GaN and InGaN was sufficiently significant to form dislocations.…”

Section: Ingan Growth On Gan/sam Templatesmentioning

confidence: 99%

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

Kobayashi

Hieda

Murata

et al. 2023

Physica Status Solidi (b)

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Herein, the effect of intermediate layers for high‐speed InGaN growth using trihalide vapor‐phase epitaxy (THVPE) on ScAlMgO4 (SAM) is investigated. The coverage and thickness of the intermediate layer have a significant impact on both composition and crystalline quality. Herein, InGaN is successfully fabricated with 17% of indium on SAM in a lattice‐matched state employing THVPE, showing the X‐ray rocking curve full width at half maximum values less than 1000 arcsec, in a two‐step growth. THVPE is used to indicate the possibility of fabricating high‐quality InGaN quasi‐substrate with high indium composition.

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Section: Ingan Growth On Gan/sam Templatesmentioning

confidence: 99%

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

Kobayashi

Hieda

Murata

et al. 2023

Physica Status Solidi (b)

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“…However, when growing GaN-based devices using substrates such as sapphire, SiC, or Si through heteroepitaxy, there is a significant problem of lattice mismatch and mismatch in the coefficient of thermal expansion, leading to the generation of numerous dislocations and defects within the devices. [16][17][18][19] This makes it a challenge to meet the stringent requirements of high-performance equipment. Homogeneous epitaxial growth on highquality GaN substrates offers a strategy to solve these problems and improve device performance.…”

Section: Introductionmentioning

confidence: 99%

Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

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As a wide band gap semiconductor, gallium nitride (GaN) has excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high‐quality, large‐size GaN crystal substrates severely limit the improvement of electronic device performance. To solve this problem, liquid phase growth of GaN has attracted much attention because it can produce higher quality GaN crystals compared to traditional vapor phase growth methods. This review introduces two main methods of liquid phase growth of GaN: the flux method and ammonothermal method, as well as their advantages and challenges. It reviews the research history and recent advances of these two methods, including the effects of different solvents and mineralizers on the growth quality and performance of GaN crystals, as well as various technical improvements. This review aims to outline the principles, characteristics, and development trends of liquid phase growth of GaN, to provide more inspiration for future research on liquid phase growth, and to achieve further breakthroughs in its development and commercial application.

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“…The study of anisotropic growth of semiconductor crystals has been a hot research topic. , Li et al prepared high-quality GaN films in [0001] crystal orientation by the stress-induced self-separation technique and explored the critical thickness of the films . Seredin et al prepared high-quality semipolar GaN samples in [112̅2] crystal orientation using the epitaxial growth technique and investigated the structure, morphology, optical properties, and Raman scattering of the grown single-crystal GaN epitaxial films . Pimputkar et al performed basic ammonothermal growth on GaN seeds in different nonpolar orientations and observed three distinct regions of surface topography .…”

Section: Introductionmentioning

confidence: 99%

“…23 Seredin et al prepared high-quality semipolar GaN samples in [112̅ 2] crystal orientation using the epitaxial growth technique and investigated the structure, morphology, optical properties, and Raman scattering of the grown single-crystal GaN epitaxial films. 24 Pimputkar et al performed basic ammonothermal growth on GaN seeds in different nonpolar orientations and observed three distinct regions of surface topography. 25 Plasma-enhanced chemical vapor deposition (PECVD) parties were also used to prepare strates.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

Wang

Gao

et al. 2023

Crystal Growth & Design

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Understanding the formation mechanism of gallium nitride (GaN) crystals in different crystal orientations to optimize the crystal quality and improve device performance is important to achieving high-performance devices. Despite significant advances in experimental techniques to study the microstructure and anisotropic differences during semiconductor crystal growth, it is still difficult to dynamically observe the microstructure evolution during GaN crystal growth at the atomic level. In this paper, the anisotropic differences in the induced growth of GaN crystals are investigated by means of molecular dynamics simulations. The results show that the crystal defects in each crystal orientation show a decreasing trend during induced growth. The generation and motion of dislocations in the GaN crystals are anisotropic. The microstructure evolution during the anisotropic growth of crystals and the mechanism of defect structure formation were investigated in detail by crystal-induced melt growth in three crystal orientations, and it was found that the crystals grown in the [1̅ 21̅ 0] crystal orientation possess optimal growth quality. These results show the growth mechanism of GaN in different crystal orientations and provide theoretical guidance for the preparation of highquality GaN.

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S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties

Cited by 8 publications

References 45 publications

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

Research Progress in Liquid Phase Growth of GaN Crystals

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

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S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties

Cited by 8 publications

References 45 publications

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO4 through Trihalide Vapor‐Phase Epitaxy

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO4 through Trihalide Vapor‐Phase Epitaxy

Research Progress in Liquid Phase Growth of GaN Crystals

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

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Product

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The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy