S0-Sn Two-Photon Absorption Dynamics of Rhodamine Dyes

Sperber, Peter; Weidner, M.; Penzkofer, Alfons

doi:10.1007/978-3-642-82918-5_126

Cited by 2 publications

(1 citation statement)

References 21 publications

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“…But a nearly similar correlation trace and an equal decay time were obtained when replacing the ZnSe samples by a thin cell with rhodamine B dye (see figure 4). As the dephasing time T 2 for rhodamine B is very short (a few hundreds of fs [16]), we could conclude that all the traces measured did in fact correspond to the autocorrelation of pump-laser pulses and that the same decay times measured were simply the coherence time of the dye laser (about 6 ps). We could also note that the dephasing times T 2 of the two ZnSe samples were less than the coherence time T L of the laser (6 ps) and could therefore not be obtained with our set-up.…”

Section: Resultsmentioning

confidence: 81%

Characterization of ZnSe epitaxial layers by four-wave mixing experiments

Chergui

Valenta

Moniatte

et al. 1996

Semicond. Sci. Technol.

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Four-wave mixing experiments in two-and in three-beam configurations have been performed at room temperature on ZnSe layers grown by two different techniques: high quality ZnSe layers grown on a GaAs (001) substrate by low-pressure metal-organic vapour phase epitaxy and pulsed laser deposited ZnSe layers on GaAs (001). The GaAs substrates were first removed by polishing and chemical etching. The linear optical properties of the ZnSe epilayers have been studied by photoluminescence, reflection and transmission measurements, in order to analyse the quality of the samples. The third-order nonlinear susceptibility χ (3) has been measured by degenerate four-wave mixing in the two-beam configuration near the absorption edge at room temperature. χ (3) values of 3.4 × 10 −4 and 1.8 × 10 −4 esu respectively have been obtained at about 2.7 eV close to the band edge of the two types of samples. The dynamics of photocreated free carriers has also been studied in the same samples by four-wave mixing experiments in the three-beam configuration at room temperature. A lifetime T 1 = 720 ± 20 ps and an ambipolar diffusion coefficient D a = 5.0 ± 0.3 cm 2 s −1 have been obtained for metal-organic vapour phase epilayers and compared with previously published results. The carrier recombination in the laser-deposited samples has been shown to be much faster, probably due to their higher concentration of crystalline defects. For all the samples studied, the homogeneous dephasing time T 2 was found to be shorter (< 2 ps) than the temporal resolution of our experimental setup .

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Section: Resultsmentioning

confidence: 81%