2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522)
DOI: 10.1109/apmc.2000.925963
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S-parameter simulation with a new MOSFET model

Abstract: This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The dc and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements.

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