S/N study of micro-hall sensors made of single crystal InSb and GaAs

Sugiyama, Yoshinobu; Kataoka, S.

doi:10.1016/0250-6874(85)80022-6

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…4. [22][23][24][25][30][31][32][33][34] The values of D and S have a general trend of D µ S −1 representing Eq. (2).…”

Section: Resultsmentioning

confidence: 99%

“…[22][23][24] The higher Hall sensor performance has been reported using the high-mobility channels based on InSb having a relatively light electron mass. 33,34) Since the magnetic-field sensitivity for the semiconductor Hall sensor is characterized by carrier density and mobility, the sensing properties are easily modulated by thermal fluctuation at usual operation temperature in typical narrow gap semiconductors such as InSb. The superior thermal stability, the use of non-toxic elements and simple fabrication process of Fe-Sn nanocrystalline films highlight the increasing utility of the Hall sensor based on ferromagnetic thin films with the reasonable sensing properties.…”

Section: Resultsmentioning

confidence: 99%

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Improvement of the detectivity in an Fe–Sn magnetic-field sensor with a large current injection

Shiogai¹,

Jin²,

Satake³

et al. 2022

Jpn. J. Appl. Phys.

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A ferromagnetic nanocrystalline Fe-Sn is an excellent platform for magnetic-field sensor based on anomalous Hall effect (AHE) owing to simple fabrication and superior thermal stability. For improvement of the magnetic-field sensitivity, doping impurity and increasing injection current are effective approaches. However, in the light of magnetic-field detectivity, the large current may increase the voltage noise. In this study, a maximum allowable current of was improved by employing the overlayer electrode configuration on a Ta-doped Fe-Sn AHE sensor. In noise measurements, the 1/f noise becomes significant with increasing the current at low frequency, resulting in saturation of the detectivity to 240 nTHz-1/2 at 120 Hz. At high frequency, the detectivity reaches 48 nTHz-1/2 at 3.1 mA showing ten times improvement of the detectivity compared with the non-doped Fe-Sn AHE sensor. Material design and device structure optimization will accelerate further improvement of the sensing properties of the Fe-Sn-based AHE sensor.

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“…4. [22][23][24][25][30][31][32][33][34] The values of D and S have a general trend of D µ S −1 representing Eq. (2).…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Improvement of the detectivity in an Fe–Sn magnetic-field sensor with a large current injection

Shiogai¹,

Jin²,

Satake³

et al. 2022

Jpn. J. Appl. Phys.

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“…This implies that by using an alternate thermally-stable doping scheme, epigraphene could well outperform Hall elements based III-V at high temperatures. 29,[31][32][33] Our work paves the way for development of epigraphene Hall sensors for real-world applications which require durable, controllable and sensitive devices produced in a scalable way. In general, the offset voltages are on the order 1 mV, and tends to increase as samples are doped towards neutrality (puddle regime).…”

Section: Table I Figures Of Merit For Room Temperature Hall Sensor Pe...mentioning

confidence: 99%

The performance limits of epigraphene Hall sensors doped across the Dirac point

Shetty

Kubatkin

et al. 2020

Applied Physics Letters

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Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities SV=0.23 V/VT, SI=1440 V/AT and magnetic field detection limits down to BMIN=27 nT/√Hz at 20 kHz. Thermally stabilized devices demonstrate operation up to 150 ˚C with SV=0.12 V/VT, SI=300 V/AT and BMIN~100 nT/√Hz at 20 kHz.Based on the classical Hall Effect, solid-state Hall sensors represent a large portion of magnetometers which are extensively used in automotive, marine and consumer electronics applications. Hall sensors based on silicon see widespread use owing to well-established and lowcost production methods, 1-3 but increasing requirements placed on improved magnetic performance or resilience to harsh conditions like high temperatures, demand the exploration of other, even more suitable materials. 4

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“…Within the 2DM family, graphene is a particularly attractive candidate for Hall sensing due to relatively mature wafer-scale synthesis and transfer techniques 47 – 49 , as well as its extremely high room-temperature carrier mobility 50 – 52 . Graphene μHDs have been shown to outperform state-of-the-art Hall sensors made from semiconductor materials such as bismuth 53 – 56 , silicon 57 , 58 , gallium arsenide (GaAs) 58 , 59 , and indium antimonide (InSb) 59 , 60 , as well as emerging 2DMs such as molybdenum sulfide 61 (Table 1 ). Additionally, the graphene carrier density, and thus the magnetic sensitivity, can be tuned by varying the backgate voltage applied to the substrate relative to the graphene surface, providing an in situ method of tuning the sensor’s performance 52 .…”

Section: Introductionmentioning

confidence: 99%

Highly stable integration of graphene Hall sensors on a microfluidic platform for magnetic sensing in whole blood

et al. 2023

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The detection and analysis of rare cells in complex media such as blood is increasingly important in biomedical research and clinical diagnostics. Micro-Hall detectors (μHD) for magnetic detection in blood have previously demonstrated ultrahigh sensitivity to rare cells. This sensitivity originates from the minimal magnetic background in blood, obviating cumbersome and detrimental sample preparation. However, the translation of this technology to clinical applications has been limited by inherently low throughput (<1 mL/h), susceptibility to clogging, and incompatibility with commercial CMOS foundry processing. To help overcome these challenges, we have developed CMOS-compatible graphene Hall sensors for integration with PDMS microfluidics for magnetic sensing in blood. We demonstrate that these graphene μHDs can match the performance of the best published μHDs, can be passivated for robust use with whole blood, and can be integrated with microfluidics and sensing electronics for in-flow detection of magnetic beads. We show a proof-of-concept validation of our system on a silicon substrate and detect magnetic agarose beads, as a model for cells, demonstrating promise for future integration in clinical applications with a custom CMOS chip.

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S/N study of micro-hall sensors made of single crystal InSb and GaAs

Cited by 10 publications

References 11 publications

Improvement of the detectivity in an Fe–Sn magnetic-field sensor with a large current injection

Improvement of the detectivity in an Fe–Sn magnetic-field sensor with a large current injection

The performance limits of epigraphene Hall sensors doped across the Dirac point

Highly stable integration of graphene Hall sensors on a microfluidic platform for magnetic sensing in whole blood

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