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Klaus, Peter; Krieger, Winfried

doi:10.1007/978-3-663-10125-3_19

Cited by 5 publications

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“…In SiO 2 ALD, the drawbacks are the high deposition temperatures required above 320°C and the large reactant exposures above 10 9 L͑1 L = 10 −6 Torr s͒ needed for the surface half-reactions to reach completion. 3,6 To perform SiO 2 ALD at a temperature lower than 200°C and with reduced reactant exposures, surface reactions may be accelerated by catalysis. 6 In the case using pyridine ͑C 5 H 5 N͒ as a catalyst, 0.215 nm SiO 2 films per deposition cycle were obtained at room temperature.…”

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“…When NH 3 is used as the catalyst in the deposition of SiO 2 films, the results are analogous to those obtained when pyridine is used as the catalyst. 6 Without using a catalyst, various precursors and reactant gases have been employed to develop SiO 2 ALD. 7,8 Tetra-isocyanate silane ͓Si͑NCO͒ 4 ͔ and Si͑C 6 H 10 ͒ 2 were used as precursors, and ozone and hydrogen peroxide as well as water have been used as reactant gases.…”

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“…3,6 To perform SiO 2 ALD at a temperature lower than 200°C and with reduced reactant exposures, surface reactions may be accelerated by catalysis. 6 In the case using pyridine ͑C 5 H 5 N͒ as a catalyst, 0.215 nm SiO 2 films per deposition cycle were obtained at room temperature. 3 However, some problems continue to persist.…”

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Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition

Lim

Yun

Lee

2005

Electrochem. Solid-State Lett.

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AlSi x O y films with very good uniformity were deposited by plasma-enhanced atomic layer deposition ͑PEALD͒. Although the SiO 2 PEALD failed at 150°C, Si atoms could be incorporated to form AlSi x O y films when AlO and SiO subcycles were alternately performed. The catalytic effect of AlO films permits Si atoms to be incorporated into the films. Hence, it is possible to increase the Si content from 0 to 11.6 atom % by increasing SiO subcycles. The degradation of leakage current for AlSi x O y films did not occurr compared to Al 2 O 3 films.In the fabrication of low-temperature poly-Si ͑LTPS͒ thin film transistors ͑TFT͒ using a plastic substrate for flexible devices, the process temperature should be below 200°C. 1 Hence, the development of a process for producing high quality gate dielectrics without a subsequent post-heat-treatment is needed. In our previous report, Al 2 O 3 films were successfully grown as a gate dielectrics of LTPS TFT by plasma-enhanced atomic layer deposition ͑PEALD͒ at 150°C. 1 However, in the case of Al 2 O 3 films grown on Si, a low quality interface is formed, which results in the degradation of device performance. Hence, an in situ plasma oxidation process was performed to form a very thin SiO 2 layer before the Al 2 O 3 growth in an attempt to enhance the quality of the interface between the Si and the oxide. 1 In sub-0.1 m complementary metal-oxide-semiconductor ͑CMOS͒ technology, silicate films have been selected as candidates for the use of dielectric materials to avoid the formation of a low k interfacial oxide layer and to stabilize the amorphous structure. 2 Because of this, the development of a process for depositing silicate films is needed. The atomic layer deposition ͑ALD͒ method may be suitable for growing high quality and uniform films.In the field of LTPS TFT for flexible displays, a process temperature below 200°C is needed. Hence, among the available deposition methods, ALD is the most suitable candidate for achieving a uniform and conformal film deposition. [3][4][5] In fact, the best way to fabricate high quality gate dielectrics in LTPS TFT, SiO 2 , or silicate films should be to grow them on a Si substrate for compatibility. In SiO 2 ALD, the drawbacks are the high deposition temperatures required above 320°C and the large reactant exposures above 10 9 L͑1 L = 10 −6 Torr s͒ needed for the surface half-reactions to reach completion. 3,6 To perform SiO 2 ALD at a temperature lower than 200°C and with reduced reactant exposures, surface reactions may be accelerated by catalysis. 6 In the case using pyridine ͑C 5 H 5 N͒ as a catalyst, 0.215 nm SiO 2 films per deposition cycle were obtained at room temperature. 3 However, some problems continue to persist. The reduction in growth rate occurs abruptly, resulting from a reduction in the surface coverage of the reactant and pyridine. As a result, it is difficult to obtain a reasonably high growth rate at temperatures above 100°C. Another problem is that a relativly long time, above 1 min per one cycle, is required to satura...

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Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition

Lim

Yun

Lee

2005

Electrochem. Solid-State Lett.

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“…[6][7][8] There are some limitations, however, in conventional AFM due to adhesive forces between the probe and the layer of adsorbed gases ͑condensed water vapor and other contaminants͒ that cover most surfaces under ambient air conditions. AFM is capable of resolving crystalline and amorphous insulator surfaces down to the nanoscale, and it has been used recently to characterize SiO 2 surfaces.…”

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Comparison of atomic force microscopy imaging methods and roughness determinations for a highly polished quartz surface

Dokou

Zhang

Barteau

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Inorganic ALD material generation on organic polymers has been found to be a reliable, scalable, and high‐performing method utilizing aluminum oxide (Al 2 O 3 ) as a model material . Other materials are available in conformal ALD because Al 2 O 3 is often used as a seed layer for the growth of metal, semiconducting and insulating layers including, but not limited to W, Ru, Pt, ZnO, TiO 2 and SiO 2 . Polymers may also be used as insulating layers, adhesion layers, thermal barrier layers, encapsulating bio‐compatible gels, moldable substrates, and flexible or stretchable substrates.…”

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Ultra‐thin 3D Nano‐Devices from Atomic Layer Deposition on Polyimide

et al. 2014

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A new nanofabrication process for nano/micro‐devices through the combination of inorganic nanomaterials from atomic layer deposition (ALD) on 3‐dimensional organic polyimide substrates is developed. The first suspended ALD structures with multiple patterned suspended levels on the order of 10 nm are fabricated and results surrounding the mechanical stability of ultra‐thin suspended structures are discussed.

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Cited by 5 publications

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Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition

Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition

Comparison of atomic force microscopy imaging methods and roughness determinations for a highly polished quartz surface

Ultra‐thin 3D Nano‐Devices from Atomic Layer Deposition on Polyimide

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