Rutile-type TiO2 thin film for high-k gate insulator

Kadoshima, Masaru; Hiratani, Masahiko; Shimamoto, Yasuhiro; Torii, Kazuyoshi; Miki, Hiroshi; Kimura, S.; Nabatame, Toshihide

doi:10.1016/s0040-6090(02)01105-7

Cited by 244 publications

(115 citation statements)

References 8 publications

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“…For the annealing temperature from 400 to 700°C, the leakage current densities are improved from 8.84 9 10 -4 and 7.65 9 10 -2 A/cm 2 to 3.69 9 10 -5 and 2.23 9 10 -4 A/cm 2 at ±1.25 MV/cm, respectively. The further decrease of leakage current density at the annealing temperature higher than 800°C is due to the formation of SiO 2 at the TiO 2 /Si interface [24], which is supported by the following C-V characterization.…”

Section: Resultssupporting

confidence: 54%

High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition

Lee

Yen²,

Fan

2014

Appl. Phys. A

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The electrical characteristics of nickel-doped titanium oxide films prepared by liquid-phase deposition on p-type (100) silicon substrate were investigated. The aqueous solutions of ammonium hexafluorotitanate and boric acid were used as precursors for the growth of titanium oxide films and the dielectric constant is 29. The dielectric constant can be improved to 94 by nickel doping at the thermal annealing at 700°C in nitrous oxide.

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Section: Resultssupporting

confidence: 54%

High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition

Lee

Yen²,

Fan

2014

Appl. Phys. A

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“…Thus, finding superior alternatives, which have better electric characteristics and capable of forming a stable interface with the substrate, has become a major challenge. Among the various candidates for replacing SiO 2 as a gate oxide are ZrO 2 , HfO 2 , TiO 2 , Al 2 O 3 , Ta 2 O 5 , and Si 3 N 4 (Campbell et al, 1997, Gerritsen et al, 2005, Kadoshima et al, 2003, Nahar et al, 2007, but it is hafnia（HfO 2 ）that has attracted the greatest interest for future sub-0.1μm gate-dielectric thickness in complementary metal-oxide semiconductor (CMOS) (Wilk et al, 2001, Kingon et al, 2000, Robertson, 2004 because of its excellent static dielectric constant (k=22~25), bandgap (E g =5.5~6.0 eV), and the electric breakdown field (E bd =0.39~0.67 V/nm) (Nahar et al, 2007). At the same time, hafnium-based oxides can be made structurally stable on silicon during fabrication and operation by sufficiently increasing both the crystallization temperature and resistance to oxygen diffusion, without significantly compromising the high dielectric permittivity of HfO 2 (Choi et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Zeng

Oganov

Lyakhov

et al. 2014

Acta Crystallogr C Struct Chem

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High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as fitness function in conjunction with first-principles calculations and global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO 2 and HfO 2 , some of which correspond to known phases and some are new. The results allow us to propose characteristics (genes) common to high-fitness structures -these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO 2 -SiO 2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue of discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

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“…For instance, in the last 5-6 years, oxides with wide band-gap and high dielectric constant, known as high-k oxides [1][2][3][4][5], have attracted great attention in the electronic industry. High-k oxides, such as Al 2 O 3 , HfO 2 , ZrO 2 , and TiO 2 , are widely used in optical devices as well [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Structural study of TiO2 thin films by micro-Raman spectroscopy

et al. 2006

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Abstract:The Raman spectroscopy method was used for structural characterization of TiO 2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125-425 • C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 • C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 • C and retained this phase even after annealing at 900 • C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 • C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

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Rutile-type TiO2 thin film for high-k gate insulator

Cited by 244 publications

References 8 publications

High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition

High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition

Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Structural study of TiO2 thin films by micro-Raman spectroscopy

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