2023
DOI: 10.1088/2053-1591/ace0fa
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Rutile, anatase, brookite and titania thin film from Hubbard corrected and hybrid DFT

Abstract: As a benchmark, the structural, electronic and optical properties of the three main phases of TiO$\rm{_{2}}$ crystals have been calculated using Hubbard U correction and hybrid functional methods in density-functional theory. These calculations are compared concerning the available experimental observations on pristine TiO$\rm{_{2}}$ crystals. Modified hybrid functionals, particularly the PBE0 functional with 11.4\% fraction of exact exchange, are shown to provide highly accurate atomic structures and also acc… Show more

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Cited by 4 publications
(3 citation statements)
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“…The bandgap of 3.22 eV calculated for the pristine structure coincides with the measured value in Fig. 9b and with data reported in the literature [50][51][52].…”
Section: Discussionsupporting
confidence: 91%
“…The bandgap of 3.22 eV calculated for the pristine structure coincides with the measured value in Fig. 9b and with data reported in the literature [50][51][52].…”
Section: Discussionsupporting
confidence: 91%
“…47 The molar percentage of TiO 2 (R) obtained by the empirical formula further proved the crystal microstructure distortion owing to the surface defects. 48 The actual molar ratio of tungsten to titanium species in the WTNWs samples can be reached with about 80.0% feed ratio, further proving the successful incorporation of tungsten species.…”
Section: Resultsmentioning
confidence: 82%
“…DFT calculations represent an efficient tool not only for the prediction of behavior of metal/semiconductor interfaces but also for the explanation of their structural and electronic properties up to the level of a single atom [ 20 , 21 , 22 , 23 , 24 ]. The ongoing development of catalytic descriptors [ 25 ] and calculation procedures to overcome present methodological drawbacks [ 26 ] widens the possibility to employ in silico experiments in the design of catalyst materials. However, despite extensive research, to our knowledge, there is still a lack of systematic studies that investigate metal thin layer formation and behavior on semiconductor surfaces.…”
Section: Introductionmentioning
confidence: 99%