Ruthenium (III)–pyridine complex: Synthesis, characterization, barrier diode and photodiode applications in Al/Ru-Py/p-Si/Al sandwich device structure

Yeşildağ, Ali

doi:10.1007/s11696-021-01715-7

Cited by 11 publications

(3 citation statements)

References 69 publications

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“…The search for alternative materials to silicon, which is the basic material of electronics, which develops in parallel with information and technological developments, has focused attention on organic semiconductor materials. [4][5][6][7] Schottk contacts has widespread use in various fields such as photovoltaics, batteries, sensors, supercapacitors and transistors, making it a popular research topic for synthetic researchers. Schottky diode is an optoelectronic device that can be fabricated using any semiconductor material that exhibits a rectifying nature at the MS junction.…”

Section: Introductionmentioning

confidence: 99%

“…Organic semiconductor materials are considered as the material of the future. The search for alternative materials to silicon, which is the basic material of electronics, which develops in parallel with information and technological developments, has focused attention on organic semiconductor materials [4–7] . Schottk contacts has widespread use in various fields such as photovoltaics, batteries, sensors, supercapacitors and transistors, making it a popular research topic for synthetic researchers.…”

Section: Introductionmentioning

confidence: 99%

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Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

Erdoğan,

Rıza Deniz,

Çaldıran

et al. 2024

ChemistrySelect

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In this paper, firstly, a new organic material 9 containing triphenylamine (TPA) unit as an electron donor and diaminomaleonitrile (DAMN) unit as an electron acceptor and thiophene scaffold as a π‐linker bridge was designed for diode applications according to D‐π‐A architecture. The organic material 9 was synthesized in four reaction steps with excellent yield (94 %), and fully characterized by 1H NMR, 13C NMR, FTIR, and HRMS spectra. The diode performance properties of the obtained organic material were examined in detail. Current‐voltage (I–V) and capacitance‐voltage (C–V) measurements of this diode were carried out. As a result of the analysis of these measurements, the effect of the organic material used as the interface material on the electrical properties of the diode was analyzed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

Erdoğan,

Rıza Deniz,

Çaldıran

et al. 2024

ChemistrySelect

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“…[ 50 ] In another study, Ruthenium (III)–pyridine complex was used as an interlayer and showed excellent photodiode characteristics. [ 51 ] In our previous work, we investigated photodiode applications of complex materials. Co and Mn metal centered nicotinamide/nicotinic acid complexes were studied for photodetector applications and results revealed good detector performance.…”

Section: Introductionmentioning

confidence: 99%

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

Koçyiğit

Hussaini

Yıldırım

et al. 2022

Applied Organom Chemis

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Cd and Co metal centered nicotinamide/nicotinic acid complexes were synthesized by chemical reactions. The complexes were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT‐IR), powder X‐ray diffractometer (P‐XRD), ultraviolet–visible (UV–Vis) spectrometer, and scanning electron microscopy (SEM) with energy dispersive X‐ray (EDX) detector. The complexes were used as interfacial layers in between Al and p‐Si to fabricate Al/Cd‐complex/p‐Si and Al/Co‐complex/p‐Si metal semiconductor devices. The devices were characterized by current–voltage (I‐V) and current‐time (I‐t) measurements under dark and various light power intensities. The ideality factor, barrier height, and series resistance values were extracted from I‐V measurements and discussed in detail by various techniques. The I‐t measurements were used to derive various detector parameters such as responsivity, photosensitivity, and specific detectivity for various power values and wavelength regions. The devices exhibited good photodiode and photodetector performance according to results, and they can be improved for optoelectronic applications.

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The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions

Çaldıran

Taşyürek

Nuhoglu

2021

J Mater Sci: Mater Electron

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Ruthenium (III)–pyridine complex: Synthesis, characterization, barrier diode and photodiode applications in Al/Ru-Py/p-Si/Al sandwich device structure

Cited by 11 publications

References 69 publications

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions

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