Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent

Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

“…Even with high-k dielectrics gigabit DRAMs require high aspect ratio trenches and vias [6]. Therefore, conformal deposition techniques like metal organic chemical vapor deposition (MOCVD) is imperative.…”

Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta

“…CVD Ru films have been deposited using a number of organometallic precursors, including the carbonyl-containing compounds, such as Ru 3 (CO) 12 [2,3]; b-diketonate complexes, such as Ru(dpm) 3 (dpm = dipivaloylmethanate) [4]; pyrazolate-containing compounds, such as Ru(CO) 3 (3,5-bis(trifluoromethyl) pyrazole) [5]; and the family of compounds containing cyclopentadienyl and pentadienyl ligands, such as Ru(Cp) 2 (Cp = cyclopentadienyl) [6,7], Ru(EtCp) 2 (EtCp = ethylcyclopentadienyl) [8,9], and Ru (DMPD) 2 (DMPD = 2,4-dimethylpentadienyl) [10]. All of the aforementioned precursors are solid at room temperature, except for Ru(EtCp) 2 .…”

Ruthenium Films Deposited by Liquid‐Delivery MOCVD Using Bis(ethylcyclopentadienyl)ruthenium with Toluene as the Solvent

“…Among the various thin-film-deposition techniques in the microelectronics industry, the potential advantages of MOCVD include thickness uniformity over large substrate areas, good conformity or step coverage in complex features, and a high throughput for commercial-scale production. Since gigabit memory devices require three-dimensional capacitor structures with high-aspect-ratio trenches/ vias (5-10), [7,8] the development of an MOCVD technique for large-scale manufacture of Ru films is of great importance.…”

“…Although the deposition of Ru films by MOCVD is documented in the literature, [7,[9][10][11][12][13][14][15][16][17][18][19][20] the development of an MOCVD process for large-scale manufacture is primarily restricted by the availability of a suitable precursor, which needs to be highly volatile, thermally stable, and inexpensive. For example, it was reported [9] that Ru films prepared using bis(cyclopentadienyl)ruthenium (Ru(Cp) 2 ) showed low resistivity, small tensile stress, and excellent step coverage.…”

“…However, the vaporizer may clog because the viscosity of Ru(EtCp) 2 is about one order of magnitude higher than that of toluene and tetrahydrofuran. [7,15] We overcame the disadvantages of the source supply by dissolving source materials in toluene as a solvent. Moreover, use of a precursor solvent can improve such thin-film-growth parameters as growth rate and step coverage.…”