Run Time $V_{th}$ Extraction Based On-Chip NBTI Mitigation Sensor for 6T SRAM Cell

Raghuwanshi, Kuldeep; Sanvale, Prachi; Sharma, Kamalesh Kumar; Neema, Vaibhav; Singh, Pooja

doi:10.1109/edkcon.2018.8770501

Cited by 2 publications

(1 citation statement)

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“…To address the issue of NBTI, various techniques have been proposed by researchers for analyzing and improving the NBTI induced degradations in the CMOS circuits. 3,[10][11][12] A control signal is needed for timely activation of the NBTI monitoring sensors presented by Wang et al 1 and Shah et al, 13 this requires additional circuitry, which results in area overhead. In case of continuous monitoring of the NBTI effects in the circuit under test, the sensor circuit, which uses PMOS transistors may also be affected by NBTI.…”

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confidence: 99%

Series diode‐connected current mirror based linear and sensitive negative bias temperature instability monitoring circuit

Bhootda

Yadav

Neema

et al. 2021

Int J Numerical Modelling

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Scaling of technology has a severe impact on the reliability of semiconductor devices. Negative bias temperature instability (NBTI) is a dominant factor in reliability degradation in nano-scale technology. It is an aging phenomenon, which degrades the p-channel metal oxide semiconductor (PMOS) transistors over time. A large area of the system on chip is covered by static random access memory (SRAM) and thus the overall system performance greatly depends on the stability of SRAM. In this paper, we evaluate the effect of NBTI on 6T SRAM cell performance for the stress period of 10 years. The simulation results show that the write margin is increased by 3.356% whereas hold static noise margin (SNM), read SNM, and standby leakage current is reduced by 6.53%, 23.86%, and 13.42%, respectively. We also present a series diodeconnected current mirror-based linear and sensitive NBTI monitoring circuit using n-channel metal oxide semiconductor (NMOS) transistors only. Continuous monitoring of the NBTI effect without any bias generator or control circuit is vital for the proposed sensor circuit. We have developed the electrical equivalent model and mathematical model of the proposed sensor for the fair comparison of results obtained through simulation and modeling. The sensitivity of the sensor is 40.6 μV/nA, and the sensor output voltage has a temperature variation of 20 μV/ C.

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confidence: 99%