Run-time correction of proximity effects in raster scan pattern generator systems

Veneklasen, Lee H.; Hofmann, Ulrich; Johnson, Leslie A.; Boegli, Volker; Innes, Robert

doi:10.1016/s0167-9317(99)00060-x

Cited by 7 publications

(7 citation statements)

References 4 publications

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“…These corrections are beyond the scope of this article, but they could be applied to the original database or performed by a real-time short-range processor. 6 Although correction was implemented in a raster shapedbeam proof-of-concept tool, it is applicable to any rasterscan architecture using Gaussian as well as shaped beams. The only requirements are a rasterized image with a constant data rate and a sufficient number of applicable dose levels.…”

Section: Discussionmentioning

confidence: 99%

“…Asymmetric patterns are included to test patterns with a high coverage gradient, where backscatter from the correction dose is not accounted for in the first iteration. 6 The pad size on one or both sides of the central feature varies coverage ( Pϫ␤) from almost 0% for small pads to almost 100% for large pads. Simulations assume that the tower pads extend indefinitely in the y direction, which is valid when the 100 m length of individual tower segments is greater than the approximately 25 m range of 50 keV backscattered electrons in glass.…”

Section: B Corrections Processormentioning

confidence: 99%

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Implementation of real-time proximity effect correction in a raster shaped beam tool

Boegli

Johnson

Kao

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inProximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Proximity effect correction using pattern shape modification and area density map Accuracy and efficiency in electron beam proximity effect correction Dose, shape, and hybrid modifications for PYRAMID in electron beam proximity effect correction J. Vac. Sci. Technol. B 15, 2303 (1997 10.1116/1.589634 Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography J.

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Section: Discussionmentioning

confidence: 99%

Section: B Corrections Processormentioning

confidence: 99%

Implementation of real-time proximity effect correction in a raster shaped beam tool

Boegli

Johnson

Kao

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…with the words: "Thus the goal of proximity correction is to expose all the pattern edges isofocally with maximum exposure contrast." [39]. Here, the word isofocal signifies the exposure dose at the edge of a feature when a uniform dose profile is applied and the PSF is taken to be a symmetric Gaussian as in equation 2.1.…”

Section: Edge Slope Modification Methodsmentioning

confidence: 99%

“…al. presented a new algorithm for PEC [39]. In this technique, long range and short range correction …”

Section: Edge Slope Modification Methodsmentioning

confidence: 99%

Implementation of e-beam proximity effect correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas

Yesilköy

Peckerar

2009

2009 International Semiconductor Device Research Symposium

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Asymmetric nano-bow-tie antennas offer the possibility of direct light-to-electrical energy conversion. These nano-antennas are easily integrated with conductor-barrierconductor (CBC) tunnel junctions in between the antenna segments for the purpose of coupled signal rectification. The architecture of the tunnel junction together with the antenna size precision require nano-scale patterning accuracy. Electron Beam Lithography (EBL) is used for patterning purposes. In this study Proximity Effect (PE), a very common resolution problem in EBL, is reduced by a dose modulation technique employing linear programming (LP) algorithms. Production of tightly controlled antenna segment dimensions is achieved in conjunction with a small area tip and a small tunnel junction gap. It is expected that precise control of the gap geometry will enhance detection speed, enabling the utilization of the device for the visible range energy harvest purposes.

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“…In the papers by Groves 12 and Veneklasen et al, 13 for example, the image absorbed energy deposition is calculated and the incident dose is "corrected" by subtracting some "error" dose. In this section, we discuss the use of those methods that perform the optimization summarized by Eq.…”

Section: Experimental Details Some Examples and Comparisonsmentioning

confidence: 99%

Electron beam and optical proximity effect reduction for nanolithography: New results

Peckerar

Sander

Srivastava

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inNew types of dose distributions for vertical sidewall minimizing total dose in 3-D electron-beam proximity effect correction of nanoscale features J. Vac. Sci. Technol. B 30, 06F307 (2012); 10.1116/1.4767446 Nanoscale geometry assisted proximity effect correction for electron beam direct write nanolithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Proximity effect correction by dose modulation is widely practiced in electron-beam lithography. Optical proximity control is also possible using a combination of shape adjustment and phase control. Assigning "the right" dose ͑or fill factor and phase for optics͒ is a well known mathematical inverse problem. Linear programming, by definition, is the appropriate method for determining dose. In the past, the technique was too slow for full-scale implementation in mask making. Here, the authors discuss how recent developments in computer speed and architecture have improved the prospects for full-scale implementation. In addition, the authors discuss some numerical techniques, analogous to gridding and relaxation, that make linear programming more attractive in mask making.

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Run-time correction of proximity effects in raster scan pattern generator systems

Cited by 7 publications

References 4 publications

Implementation of real-time proximity effect correction in a raster shaped beam tool

Implementation of real-time proximity effect correction in a raster shaped beam tool

Implementation of e-beam proximity effect correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas

Electron beam and optical proximity effect reduction for nanolithography: New results

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