Rugged Electrical Power Switching in Semiconductors: A Systems Approach

Shenai, K.; Dudley, Michael; Davis, R. F.

doi:10.1109/jproc.2013.2278616

Cited by 19 publications

(11 citation statements)

References 63 publications

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“…It is anticipated that in the future, high-voltage SiC devices will impact the SM circuit configurations. Although compared to the Si devices, the commercially available SiC devices have limited rating values with higher cost, and the semiconductor development and price trends reveal that high-voltage SiC devices will become available with reasonable prices [30]. • In the long run, the long-term operational cost reduction of the MMC-HVDC systems justifies their higher initial costs.…”

Section: Discussionmentioning

confidence: 99%

Hybrid Design of Modular Multilevel Converters for HVDC Systems Based on Various Submodule Circuits

Qin

Saeedifard

Rockhill

et al. 2015

IEEE Trans. Power Delivery

322

161

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The modular multilevel converter (MMC) has become the most promising converter technology for high-voltage direct current (HVDC) transmission systems. However, similar to any other voltage-sourced converter-based HVDC system, MMC-HVDC systems with the half-bridge submodules (SMs) lack the capability of handling dc-side short-circuit faults, which are of severe concern for overhead transmission lines. In this paper, two new SM circuit configurations as well as a hybrid design methodology to embed the dc-fault-handling capability in the MMC-HVDC systems are proposed. By combining the features of various SM configurations, the dc-fault current path through the freewheeling diodes is eliminated and the dc-fault current is enforced to zero. Several MMC configurations based on the proposed hybrid design method and various SM circuits, that is, the half-bridge, the full-bridge, the clamp-double, and the five-level cross-connected SMs, as well as the newly proposed unipolar-voltage full-bridge and three-level cross-connected SMs, are investigated and compared in terms of the dc-fault-handing capability, semiconductor power losses, and component requirements. The studies are carried out based on time-domain simulation in the PSCAD/EMTDC software environment for various SM configurations and dc-fault conditions. The reported study results demonstrate the proposed hybrid-designed MMC-HVDC system based on the combination of the half-bridge and the proposed SM circuits is the optimal design among all evaluated systems in terms of the dc-fault-handing capability, semiconductor power losses, and component requirements.Index Terms-DC-side short-circuit fault, fault clearance, modular multilevel converter (MMC).

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Section: Discussionmentioning

confidence: 99%

Hybrid Design of Modular Multilevel Converters for HVDC Systems Based on Various Submodule Circuits

Qin

Saeedifard

Rockhill

et al. 2015

IEEE Trans. Power Delivery

322

161

View full text Add to dashboard Cite

show abstract

“…A fundamental requirement of semiconductor materials in such highpower applications is the ability to withstand localized Joule heating. It was shown that the worst-case Joule heating occurs when the semiconductor power switch is experiencing a simultaneous high-current and high-voltage condition, often referred to as an "avalanche state" [26,27]. This situation typically occurs when the switch is short-circuited and/or absorbing the energy stored in a charged inductor.…”

Section: Results From the High Voltage/temperature Extreme Environmen...mentioning

confidence: 99%

“…Electronics 2022, 10, x FOR PEER REVIEW 4 of 17 switch is experiencing a simultaneous high-current and high-voltage condition, often referred to as an "avalanche state" [26,27]. This situation typically occurs when the switch is short-circuited and/or absorbing the energy stored in a charged inductor.…”

Section: Results From the High Voltage/temperature Extreme Environmen...mentioning

confidence: 99%

Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics

Setera

Christou

2021

Electronics

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The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis and when the material is subjected to extreme environmental stress. Wide bandgap semiconductor devices are reviewed from the point of view of the role of defects and their impact on performance. It is shown that the reduction of defects represents a fundamental breakthrough that will enable wide bandgap (WBG) semiconductors to reach full potential. The main emphasis of the present review is to understand defect dynamics in WBG semiconductor bulk and at interfaces during the material synthesis and when subjected to extreme environments. High-brightness X-rays from synchrotron sources and advanced electron microscopy techniques are used for atomic-level material probing to understand and optimize the genesis and movement of crystal defects during material synthesis and extreme environmental stress. Strongly linked multi-scale modeling provides a deeper understanding of defect formation and defect dynamics in extreme environments.

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“…As silicon approaches its performance limits, wide-bandgap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are emerging technologies that can supersede silicon MOSFETs as next-generation power transistors. Novel wide-band III-nitride semiconductor materials are being rapidly developed because of their unique properties, such as high electron mobility, saturation velocity, sheet carrier concentration at heterojunction interfaces, and breakdown voltages [1,2]. These properties make III-nitrides feasible for high-power, high-temperature applications.…”

Section: Introductionmentioning

confidence: 99%

Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

Jeng

Chieng

2015

Journal of Nanomaterials

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This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.

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Rugged Electrical Power Switching in Semiconductors: A Systems Approach

Cited by 19 publications

References 63 publications

Hybrid Design of Modular Multilevel Converters for HVDC Systems Based on Various Submodule Circuits

Hybrid Design of Modular Multilevel Converters for HVDC Systems Based on Various Submodule Circuits

Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics

Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

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