RuAl thin films on high–temperature piezoelectric substrates

Seifert, Marietta; Menzel, S.; Rane, Gayatri K.; Hoffmann, M.; Gemming, Thomas

doi:10.1088/2053-1591/2/8/085001

Cited by 19 publications

(35 citation statements)

References 20 publications

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“…The Al diffuses to the film surface forming an oxide depleting its content in the film leading to a formation of Ru-rich grains. The presence of Ru-rich (> 90 at%) grains also explains the measurement of Ru (101) peaks in the XRD of the 800 C sample [11].…”

Section: Rual On Si/siomentioning

confidence: 72%

“…In the case of RuAl deposited on Si/SiO 2 substrates it was shown that after annealing for 10 h at 600 and 800 C the intensity of the (100) RuAl peak in the XRD measurements increased strongly with increasing temperature, indicating an improved phase formation [11]. The AES measurements of both samples showed that there is a thicker covering Al 2 O 3 layer in the latter case.…”

Section: Rual On Si/siomentioning

confidence: 92%

“…The measurements of phase formation, surface morphology and compositional changes across the film thickness have already been described in former work [11]. Now, a detailed microstructure analysis was performed by transmission electron microscopy (TEM, FEI Technai F30) in conventional TEM and high-angle annular dark field scanning (HAADF-STEM) mode.…”

Section: Methodsmentioning

confidence: 99%

“…As a general remark it has to be noted that as described in Ref. [11] the results of the AES measurements do not represent the actual chemical composition, since the relative sensitivity factors applied for the evaluation of the AES data do not consider matrix effects. While the composition of the Al oxide according to the evaluation of the AES data is about 1:1, EDX measurements performed in the TEM prove that the oxide is Al 2 O 3 .…”

Section: Rual On Si/siomentioning

confidence: 99%

“…In former work RuAl thin films (about 100 nm thickness) have been investigated, which were sputtered on LGS and CTGS as well as on thermally oxidized Si/SiO 2 reference substrates and heated up to 600 and 800 C under high vacuum conditions [11]. Global auger electron spectroscopy measurements indicated a strong oxidation of the Al with O from the substrate after annealing at 800 C and also the existence of Ga within the film was proven.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

TEM studies on the changes of the composition in LGS and CTGS substrates covered with a RuAl metallization and on the phase formation within the RuAl film after heat treatment at 600 and 800 °C

Seifert

Rane

Menzel

et al. 2016

Journal of Alloys and Compounds

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Section: Rual On Si/siomentioning

confidence: 72%

Section: Rual On Si/siomentioning

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Section: Rual On Si/siomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

TEM studies on the changes of the composition in LGS and CTGS substrates covered with a RuAl metallization and on the phase formation within the RuAl film after heat treatment at 600 and 800 °C

Seifert

Rane

Menzel

et al. 2016

Journal of Alloys and Compounds

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RuAl Thin‐Film Deposition by DC Magnetron Sputtering

Ott,

Wojcik,

Kolozsvari

et al. 2024

Adv Eng Mater

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The intermetallic transition metal B2 structured aluminide RuAl is a candidate material for use in various applications, including microelectronics and structural materials under demanding conditions, for example as oxidation and corrosion resistant materials or microelectronics. In contrast to other B2 transition metal aluminides, which usually suffer from brittle material behavior at room temperature, RuAl exhibits comparatively good room temperature ductility, in combination with further promising properties. Therefore, RuAl thin films are attracting interest as potential protective and functional surface engineering materials. The synthesis of RuAl thin films by means of physical vapor deposition, especially magnetron sputtering, is however complex and utilizes co‐deposition and multilayer from elemental sputtering targets and subsequent annealing procedures. In this work we describe an alternative route towards single phase B2 structured RuAl thin films by non‐reactive DC magnetron sputter deposition at low substrate temperature from a powdermetallurgically manufactured Ru50Al50 compound target. We studied the influence of the deposition parameters on the constitution, microstructure and selected properties of RuAl thin films. It is shown that especially the Ar process gas pressure has a significant impact on their composition and morphology. X‐ray diffraction and transmission electron microscopy with selected area electron diffraction indicate that the films are single‐phased RuAl with B2 structure.This article is protected by copyright. All rights reserved.

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Thermomechanical and Creep Behaviors of Multilayered Metallization Systems Developed for High‐Temperature Surface Acoustic Wave Sensors

Karimzadeh

Park

Seifert

et al. 2023

Adv Materials Technologies

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The structural stability and durability of a sensing device at high‐temperatures (HT) have important effects on its functionality and reliability. This becomes more critical in the devices that work based on the surface acoustic waves (SAW). In this study, the thermomechanical and creep behaviors of the metallization systems, RuAl, MoLa, and Mo suggested for the electrodes of HT‐SAW sensors are investigated. Several experiments are designed to obtain the state and the value of stress in the films deposited on a Si [100] substrate caused by the fabrication process and the operational conditions. Results show that after the film deposition, the intrinsic compressive stress in the MoLa film is significantly lower than the other films. However, after annealing the samples, the lowest residual stress is reached in the Mo. Linear stress variations during the thermal cycling of the annealed samples are obtained for all metallizations. To study the durability of the films at HT, the creep behavior of the samples is investigated by keeping them at a temperature of 600 °C for 10 h. The creep rate and its constitutive equation for the films are obtained. It is observed that the creep rate of MoLa and Mo films is much lower than RuAl.

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RuAl thin films on high–temperature piezoelectric substrates

Cited by 19 publications

References 20 publications

TEM studies on the changes of the composition in LGS and CTGS substrates covered with a RuAl metallization and on the phase formation within the RuAl film after heat treatment at 600 and 800 °C

TEM studies on the changes of the composition in LGS and CTGS substrates covered with a RuAl metallization and on the phase formation within the RuAl film after heat treatment at 600 and 800 °C

RuAl Thin‐Film Deposition by DC Magnetron Sputtering

Thermomechanical and Creep Behaviors of Multilayered Metallization Systems Developed for High‐Temperature Surface Acoustic Wave Sensors

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