RTD/HFET low standby power SRAM gain cell

Wagt, J.P.A. van der; Seabaugh, Alan; Beam, Iii. E.A.

doi:10.1109/55.650335

Cited by 104 publications

(41 citation statements)

References 16 publications

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“…This combination enables designs with very high functionality due to the self-latching nature of RTD or RITD circuits. RTD/HEMT circuits have been fabricated in the InP-based material system for low-power static random access memory 1 and logic gates operating at 35 GHz. 2 The 6.1 Å material system, consisting of InAs, GaSb, AlSb, and related alloys, offers the potential for RITD/ HEMT circuits operating at lower power than the InP-based circuits.…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

Bennett

Bracker

Magno

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Introductionmentioning

confidence: 99%

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

Bennett

Bracker

Magno

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

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“…The NDR characteristic has been exploited in novel digital integrated circuits combining RTDs and transistors, enabling greater functionality than transistor-only circuits, including digital logic [9,10] and low-power, high-density memory cells operating at room temperature [11].…”

Section: Introductionmentioning

confidence: 99%

Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff

Brar¹,

Moise²

1999

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“…The primary application focus was the quantitative modeling of resonant tunneling diodes (RTDs). These III-V high speed devices were developed for high speed applications such as analog-digital-converters [1] and memory devices [2]. …”

mentioning

confidence: 99%

NEMO 1-D: the first NEGF-based TCAD tool

Klimeck

2004

Simulation of Semiconductor Processes and Devices 2004

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The fundamentally sound non-Equilibrium Green's function (NEGF) approach provides the theoretical basis for NEMO 1-D as the first nanoelectronic TCAD tool. Effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical phonons are modeled. Engineers and experimentalists who desire a black-box design tool as well as theorists who are interested in a detailed investigation of the physics have found NEMO useful. Access to this comprehensive theoretical framework is accommodated by a graphical user interface (GUI) which configures the usage of a collection of models that trade off physical content with speed and memory requirements. This article describes the NEMO origin, provides modern references to NEGF, accumulates the diverse references to the NEMO results, and provides a perspective on NEGF in future TCAD tools. History and AcknowledgementsThe nanoelectronic modeling (NEMO) program is the result of a multi-year development effort involving an industrial research laboratory (Central Research Laboratory of Texas Instruments, later transferred to Raytheon TI Systems), several Universities (UT Dallas, Ohio State U., U. Alabama in Huntsville), and a US Federally Funded Development and Research Center (NASA, JPL, California Institute of Technology). The original development began in 1993 with the lead of TI and concluded with the delivery of the tool to the US government sponsor in January of 1998. The development then shifted to the NASA Jet Propulsion Laboratory. A large number of people involved with the NEMO 1-D code over the past 11 years. I would especially like to acknowledge the key contributors to the development of the tool: Drs. Roger Lake, R. Chris Bowen, Dan Blanks, Bill Frensley, and Tim Boykin. The primary application focus was the quantitative modeling of resonant tunneling diodes (RTDs). These III-V high speed devices were developed for high speed applications such as analog-digital-converters [1] and memory devices [2]. Modern NEGF Method References for Carrier TransportNovel aspects of the theory developed under the NEMO program are described in detail in [3]. Early work on the NEGF approach has been focussed on bulk many-body interactions and the literature was difficult to penetrate. Just over the past few years Datta has published [4,5] introductions to NEGF that enable the electrical engineer to

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RTD/HFET low standby power SRAM gain cell

Cited by 104 publications

References 16 publications

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff

NEMO 1-D: the first NEGF-based TCAD tool

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