RRAM and WORM memory devices using Protamine Sulfate and Graphene Oxide

Banik, Hritinava; Sarkar, Surajit; Rahman, Farhana Yasmin; Kalita, Hemen; Bhattacharjee, D.; Hussain, Syed Arshad

doi:10.1016/j.matpr.2022.06.201

Cited by 3 publications

(3 citation statements)

References 30 publications

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“…This establishes that the Ag/P3GLP/ITO device is polarity dependent, unlike the previously reported organic WORM devices in the literature. − The observance of a low current peak before the V SET is due to the device capacitance, indicating the trapping of charges by the AAM-GO nanofibers . Similar I – V characteristics were also observed for 5 more devices (Figure S10).…”

Section: Resultssupporting

confidence: 76%

Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications

Manna,

Saha,

Mondal

et al. 2024

ACS Appl. Electron. Mater.

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With the growth of modern data-driven technology, the demand for long-term and stable memory devices has become the primary focus. Over the decades, organic material-based resistive memory devices have shown promising nonvolatile memory performance. In this connection, low-cost graphene materials have found many advances. Graphene oxide-based materials with a chemically adjustable structure, low mass density, good specific surface area, electrical conductivity, and thermoresistance are promising candidates for such memory devices. Graphene-based nanofiber materials are reported to outperform their nanotube counterparts in long-term storage device applications. In this study, we report for the first time a highly stable resistive memory device of graphene in the oxidized form as an amino acid-modified graphene oxide (AAM-GO) wrinkled nanostructure with fiber morphology embedded in poly(methyl methacrylate) (PMMA) as the active layer. The current–voltage characteristics of the device exhibit a write-once-read-many (WORM) times memory behavior, with a cyclic endurance of >104 cycles and data retention of >107 s. The high ON-OFF ratio of >103 remained consistent during the entire testing duration. A suitable mechanism is suggested for such high stability of the device.

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Section: Resultssupporting

confidence: 76%

Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications

Manna,

Saha,

Mondal

et al. 2024

ACS Appl. Electron. Mater.

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“…It is interesting to note that, several biocompatible as well as natural materials (plant extract) have already showed excellent performance as RS devices. , A number of biomaterials, viz., proteins, cellulose, biopolymers, polysaccharides, natural plant extracts, glucose, chitosan, and so forth, have been reported to show excellent RS behaviors with a wide variety of memory applications . In addition to biocompatibility, biobased RS devices may be utilized to realize biorealistic synaptic devices for neuromorphic computation applications .…”

Section: Introductionmentioning

confidence: 99%

“…16,17 A number of biomaterials, viz., proteins, 12 cellulose, 18 biopolymers, 19 polysaccharides, 20 natural plant extracts, 21 glucose, 22 chitosan, 23 and so forth, have been reported to show excellent RS behaviors with a wide variety of memory applications. 24 In addition to biocompatibility, biobased RS devices may be utilized to realize biorealistic synaptic devices for neuromorphic computation applications. 25 However, very few reports exist showing Write Once Read Many (WORM) applications employing biomaterials.…”

Section: ■ Introductionmentioning

confidence: 99%

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 10 2 ), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

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Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide

Jhang,

Hsieh,

Zhang

et al. 2024

IEEE Trans. Electron Devices

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RRAM and WORM memory devices using Protamine Sulfate and Graphene Oxide

Cited by 3 publications

References 30 publications

Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications

Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide

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