RPECVD thin silicon carbonitride films using hexamethyldisilazane

Файнер, Н. И.; Косинова, М. Л.; Rumyantsev, Yu. M.; Kuznetsov, F. A.

doi:10.1051/jp4:1999897

Cited by 19 publications

(17 citation statements)

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“…With the increase in the temperature of the synthesis the concentration of Si-C bonds increases, in spite of the fact that the chemical composition of films prepared from HMCTS is close to silicon nitride, from TMDS, to silicon carbide, from HMDS is between them. This coincides with the results of thermodynamic calculations for the system Si-C-N-H with the use of the starting gas mixtures (TMDS+He), (HMDS+He), and (CHMTS+He) [46,58].…”

Section: Determination Of Chemical Phase Compositions and Types Of supporting

confidence: 74%

“…It is noteworthy here that the molecular structure of the starting organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited films of silicon carbonitride. The main part of compounds used for preparation of silicon carbonitride belonged to the class of silazanes: hexamethyldisilazane [11,39,[42][43][44][45][46][47][48][49][50][51][52][53][54], hexamethylcyclotrisilazane [55][56][57][58][59], polysilazanes, etc.…”

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confidence: 99%

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From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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Films of silicon carbonitride of variable composition are prepared by the method of plasmochemical decomposition of tetramethyldisilazane, hexamethyldisilazane, and hexamethylcyclotrisilazane in the mixture with helium in the temperature range of 373-973 K. The chemical composition of the low temperature films (373-673 K) is described by the formula SiC x N y O z :H, whereas that of high temperature films, by the formula SiC x N y . The films of silicon carbonitride are found to be a nanocomposite material containing an amorphous part and nanocrystals, whose structure is close to the phase α-Si 3 N 4 . Films of the composition SiC x N y O z :H are promising as low-k interlayer dielectrics in ultra-large scale integrated circuits of new generation, as well as protecting antireflective coatings and light-emitting diodes.Nowadays more severe requirements are imposed on the quality of construction materials used in many fields of science and technology. New materials are necessary stable to high temperatures, mechanical wear, abrasion, corrosion and oxidation [1]. That is why various methods are intensively developed for the synthesis of refractory superhard coatings (hardness > 20 GPa), which have long lifetime, enhanced hardness, and are relatively cheap [2]. For example, coatings are made of materials alternative to the expensive diamond coatings. Binary solid compounds like SiC, TiC, TiN can provide an enhanced wear stability, but hardly can possess a wide variety of functional properties.Recent research has shown that coatings on the basis of ternary compounds exceed in their functional properties the coatings based on binary compounds [3]. One of promising ternary materials is silicon carbonitride. It possesses new properties as compared with crystalline binary compounds Si 3 N 4 and SiC. Films of silicon carbonitride possess an exclusive combination of physicochemical properties like high thermal conductivity, thermal stability (up to 1500°C), resistance to oxidation, high hardness, chemical inertness, that makes them ideal wear-and corrosionstable materials for applications in aggressive media, for high-temperature industrial and strategic applications [4][5][6][7][8][9][10]. It is assumed that a high thermal, chemical, and mechanical stability is achieved due to the absence of boundaries between the grains and of the oxides as secondary phases in these coatings. Besides, such properties as low density and good thermal shock resistance, are very important in the future for aerospace, automobile, and other fields of industry. It is known that stainless steel possessing high corrosive stability is rusted when stored for a long time in the open air because of acid rains. To prevent this process, the steel must be coated, for example, with a transparent solid film, like the film of silicon carbonitride [11]. In general, films of silicon carbonitride can be used in various applications, not only as barrier isolating layers, films for protection of flat panel displays, but also for general industrial application.Ad...

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Section: Determination Of Chemical Phase Compositions and Types Of supporting

confidence: 74%

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confidence: 99%

From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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“…Silicon carbonitride layers have been grown by means of different methods, namely, chemical vapor deposition (CVD) at higher temperatures [17][18][19][20], use of hot filament chemical vapor deposition [21], plasma enhanced chemical vapor deposition (PECVD) [22][23][24][25][26][27][28][29][30], microwave plasma enhanced chemical vapor deposition (PECVD) [31][32][33][34][35], elec tron cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) [11,12], pulsed laser dep osition [4,13], ion beam sputtering [3,36,37], and reactive magnetron sputtering [7,[38][39][40][41][42][43][44].…”

Section: Introductionmentioning

confidence: 99%

“…These compounds are of particular interest, since the molecular structure of the initial organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited silicon carbonitride films. A large share of the organosilicon compounds used earlier to obtain silicon carbonitride belongs to the silazane class: hex amethyldisilazane (HMDS) [10,[22][23][24][25][26][27][28][29][30]46], hexame FAINER et al thylcyclotrisilazane [47][48][49][50][51], polysilazanes, etc. At present, there is a continuous search for and synthesis of other organosilicon compounds capable of provid ing new physicochemical and functional properties to their derivatives-silicon carbonitride layers.…”

Section: Introductionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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Abstract⎯Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile silicon organic compound tris(diethylamino)silane (Et 2 N) 3 SiH (TDEAS) in the temperature region 373-1173 K. Thermodynamic simulation of the deposition processes from the gas mixture (TDEAS + He) in the temper ature interval 300-1300 K and pressure interval from 1 × 10 -2 to 10 mm Hg has revealed the possibility of varying the equilibrium composition of the condensed phase depending on the synthesis temperature and the composition of the initial gas mixture. Physicochemical and functional properties of obtained layers were studied by complex of modern methods. It has been established that the chemical composition of the silicon carbonitride layers obtained by the PECVD method, depending on the deposition conditions, approaches that of silicon oxynitride or nitride, and the composition of those obtained by the LPCVD method approaches that of silicon carbide. The presence of nanocrystals with a phase composition close to the stan dard α Si 3 N 4 phase and of carbon inclusions has been found in the layers.

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“…[2][3][4] Of the various methods used for the fabrication of Si:C:N films, the CVD techniques using organosilicon single-source precursors appeared to be very effective. The Si:C:N films were formed by; thermal CVD from ethylcyclosilazane, [5] hot-wire CVD from hexamethyldisilazane, [6] direct plasma (DP)CVD from hexamethyldisilazane, [7][8][9][10][11] bis(trimethylsilyl)carbodiimide, [10][11][12] and bis(dimethylamino)dimethylsilane, [13] RPCVD from hexamethyldisilazane, [14][15][16][17] 1-dimethylsilyl-2,2-dimethylhydrazine, [18,19] dimethylbis(2,2-dimethylhydrazino)silane, [18,19] 1,1,3,3-tetramethyldisilazane, [20,21] tris(dimethylamino)silane, [22] and (dimethylamino)dimethylsilane. [23] Among these CVD techniques the latter, RPCVD (also termed indirect or downstream plasma CVD) was found to be particularly useful for the fabrication of defect-free and morphologically uniform Si:C:N thin-film materials.…”

Section: Introductionmentioning

confidence: 99%

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

Wróbel

Blaszczyk-Lezak

2007

Chemical Vapor Deposition

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Silicon carbonitride (Si:C:N) films are produced by hydrogen remote microwave plasma (RP)CVD using a 1,1,3,3-tetramethyldisilazane precursor. The effect of the substrate temperature on the rate and yield of the hydrogen RPCVD process, chemical composition, chemical structure, and surface morphology of the resulting film are investigated. The Arrhenius plots of the substrate temperature dependencies of the mass-and thickness-based growth rate and growth yield of Si:C:N film imply that RPCVD is controlled by the adsorption of film-forming precursors onto the growth surface. The results of Auger electron spectroscopy (AES) and Fourier transform infrared (FTIR) examinations reveal that the increase in substrate temperature from 35°C to 400°C involves the elimination of organic groups from the film and the formation of a silicon carbonitride network structure with a predominant content of Si-C carbidic bonds. The atomic force microscopy (AFM) results show that the films are morphologically homogeneous materials of surface roughness varying in a narrow range of small values (0.9 -2.0 nm).

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RPECVD thin silicon carbonitride films using hexamethyldisilazane

Cited by 19 publications

References 0 publications

From organosilicon precursors to multifunctional silicon carbonitride

From organosilicon precursors to multifunctional silicon carbonitride

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

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