Roughness evolution in thin-film growth of SiO2 and Nb2O5

Elsholz, F.; Schöll, Eckehard; Scharfenorth, Ch.; Seewald, G.; Eichler, Hans Joachim; Rosenfeld, A.

doi:10.1063/1.2130521

Cited by 27 publications

(17 citation statements)

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“…It is thus expected that this anomalous scaling roughening could be caused by the limited surface diffusion mechanism. 26 Jeffries et al 19 found a similar result: they analyzed the roughening instability of Pt films sputtered at T s /T m ¼ 0.14 and proved that the limited diffusion mechanism resulted in the anomalous scaling (a ¼ 0.90 and b ¼ 0.26) of the films.…”

Section: Resultsmentioning

confidence: 60%

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Suppression of surface roughening kinetics of homogenously multilayered W films

Yang

Zhu

Wan

et al. 2015

Journal of Applied Physics

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Using multi-step deposition mode, we developed an innovational strategy of homogenously multilayered (HM) structure to tailor the roughening kinetics of sputtered W films. Dynamic scaling analysis showed that all sublayers of HM W films exhibited the same anomalous roughening behavior, which originated from the limited surface diffusion. Intriguingly, different from its single-layered counterpart, the HM W films exhibited a suppression effect of kinetic roughening, which could be well manipulated by film modulation period. Detailed experimental characterization and phenomenological model analysis suggested that this roughening suppression arises from the multi-interruption of the continuous film roughening process, forming an interlayer interface after every interruption and restarting the sublayer roughening on the pre-sublayer surface.

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Section: Resultsmentioning

confidence: 60%

“…Notably, we observed an upshift of G(r) as h s increased, suggesting that the sublayer roughening exhibits anomalous scaling. 26 We then obtained a by least-squares fitting to the linear slope of the logG(r)-logr plot at small r ((n). b is calculated from the R rms values, using the definition in Eq.…”

Section: Resultsmentioning

confidence: 99%

Suppression of surface roughening kinetics of homogenously multilayered W films

Yang

Zhu

Wan

et al. 2015

Journal of Applied Physics

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“…Larger growth exponents 0 5 β > . , as found experimentally in amorphous SiO 2 and Nb 2 O 5 thin films [8] as well as for instance in organic films [10,11], can be explained by including in the energies random fluctuations ( ) ε x which mimic the amorphous structure [5]. It was demonstrated in [5] for uniform white energy fluctuations ( ) ε x with…”

Section: The Kinetic Monte Carlo Modelmentioning

confidence: 90%

“…which follows from the saturation roughness sat w L α µ [8]. As we have shown previously [9] by setting ( ) 0, ε = x the basic model results in different growth regimes with growth exponents ranging from 0 .…”

Section: The Kinetic Monte Carlo Modelmentioning

confidence: 96%

Kinetic Monte Carlo simulations of amorphous thin‐film growth

Elsholz

Schöll²,

Rosenfeld

2007

Physica Status Solidi (b)

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PACS 61.43. Er, 68.35.Ct, 68.55.Ac Amorphous SiO 2 and Nb 2 O 5 thin-film growth simulations are performed on the basis of a solid-on-solid model considering fluctuating effective atom binding energies. We show that by assuming laterally correlated random energy fluctuations, one can obtain effective growth exponents and overall film roughness in agreement with experimental results. The solid-on-solid model is solved by event-based kinetic Monte Carlo simulations and the obtained results are compared to atomic force microscopy data.

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“…One of the primary experimental goals is to achieve nanoscale control of layer thickness and surface morphology. For many thin film applications, for instance, in optics 25 or in semiconductor nanostructures, it is essential to control and adjust the roughness, e.g., in order to minimize scattering losses. On the theoretical side, considerable effort has been focused on developing suitable evolution equations for the growing layer.…”

mentioning

confidence: 99%

Controlling surface morphologies by time-delayed feedback

2007

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We propose a method to control the roughness of a growing surface via a time-delayed feedback scheme. The method is very general and can be applied to a wide range of nonequilibrium growth phenomena, from solid-state epitaxy to tumor growth. Possible experimental realizations are suggested. As an illustration, we consider the Kardar-Parisi-Zhang equation ͓Phys. Rev. Lett. 56, 889 ͑1986͔͒ in 1 + 1 dimensions and show that the effective growth exponent of the surface width can be stabilized at any desired value in the interval ͓0.25, 0.33͔, for a significant length of time. DOI: 10.1103/PhysRevB.75.233414 PACS number͑s͒: 68.35.Rh, 05.10.Gg, 02.30.Ks, 02.60.Cb The control of unstable states in chaotic or patternforming nonlinear dynamical systems has attracted much interest recently. 1,2 Time-delayed feedback control 3 has been especially successful in stabilizing a variety of dynamic and spatial structures, including noise-induced oscillations and patterns found, e.g., in semiconductor nanostructures. [4][5][6][7] Here, we propose to apply these control techniques to a completely new class of dynamical phenomena, namely, farfrom-equilibrium surface growth. [8][9][10] The goal is to stabilize desired surface characteristics, such as spatiotemporal height-height correlations or the surface roughness, during the growth process. Even if such control can only be sustained in a finite window of time, its experimental potential is undiminished since the growth process can simply be terminated when the desired characteristics have been achieved, thanks to today's precise in situ characterization capabilities. Moreover, paradigmatic growth models, such as the KardarParisi-Zhang ͑KPZ͒ equation, 11 find applications in many diverse areas of science, e.g., thin film growth, 12-15 fluctuating hydrodynamics, 16 driven diffusive systems, [17][18][19] tumor growth in biophysics, [20][21][22] propagating fire fronts, 23 and econophysics. 24 Therefore, broad implications can be expected if methods from control theory can be successfully implemented in this vast context.In this Brief Report, we provide an exploration of these ideas. We choose the most promising type of control, timedelayed feedback, and study its effects on the KPZ equation. 11 Specifically, we attempt to control the effective dynamic growth exponent ␤ associated with the roughness of the growing surface. By implementing two realizations of the control scheme, we will see below that we can, indeed, stabilize ␤ in a range of values between the two universal limits, 1 / 4 and 1 / 3, over at least one to two decades in time. In the following, we will use the language of surface growth, but our findings are just as relevant in the context of all other applications of the KPZ equation. For instance, in recent work on tumor growth, 20 it has been shown that an efficient method to influence the proliferation of tumor cells at the border is coupled to the growth exponents and the universality class of growth. The authors suggest and establish a therapy which rests on th...

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Roughness evolution in thin-film growth of SiO2 and Nb2O5

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Cited by 27 publications

References 23 publications

Suppression of surface roughening kinetics of homogenously multilayered W films

Suppression of surface roughening kinetics of homogenously multilayered W films

Kinetic Monte Carlo simulations of amorphous thin‐film growth

Controlling surface morphologies by time-delayed feedback

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