Rotation Effect of In-plane FM layer on IrMn Based GMR-SV Film

Abstract

The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of φ = 0°-360° are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(θ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of 110° are 100 °C and 90°, respectively.

Fabrication and Usage of a Multi-turn μ-Coil and a PR Channel Combined with a Dual-type GMR-SV Device

“…The dual-type GMR-SV film of Ta(5 nm)/NiFe(5 nm)/ CoFe(3 nm)/Cu(2.5 nm)/CoFe(4 nm)/IrMn(8 nm)/CoFe(4 nm)/Cu(2.5 nm)/CoFe(3 nm)/NiFe(5 nm)/Ta(5 nm) multilayer was fabricated by using the ion beam deposition system [9]. To improve the magnetoresistive properties of all thin film samples, the heat treatment is performed in the vacuum chamber under a magnetic field of 1 kOe and at the annealing temperature of 200 o C for 1 hr [10].…”