Rotation angle of magneto-optical Kerr effect with different capping layer on CoFe film

Wu, Kaijie; Wang, Jia Feng; Chen, Kuang Ching; Wu, Jong-Ching; Horng, Lance

doi:10.1016/j.jmmm.2006.10.997

Cited by 6 publications

(2 citation statements)

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“…Such an effect, which will be discussed in more details in the next section, was already observed for other ferromagnetic materials(TbFe and GdTbFeCo with a-Si:0 [23], NiFe with ZnS [24]). MgO and SiN x capping layers on CoFehave also been investigated [25]. The amplitude of θ K decreases with temperature.…”

Section: -Results and Discussionmentioning

confidence: 99%

“…Therefore differential imaging and exposure time of the order of 1 s have to be used [22]. It is well known that this rotation angle and thus the magnetic contrast can be enhanced by using multiple reflections in an additional anti-reflecting dielectric layer deposited onto the surface of metallic magnetic samples [19,23,24,25]. However this has not yet been evidenced with magnetic semiconductorsin which the typical penetration depth of light can be of several hundreds of nm.…”

Section: Introductionmentioning

confidence: 99%

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Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

Riahi

Thevenard

Maaref

et al. 2015

Journal of Magnetism and Magnetic Materials

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A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer is investigated in view of its use in device implementation to study surface acoustic wave assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers overgrowth on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level.

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Section: -Results and Discussionmentioning

confidence: 99%