Room-temperature yield and fracture strength of single-crystalline 6H silicon carbide

Kwon, Gihyun; Jo, Hyo-Haeng; Lim, Sangyeob; Shin, Changsoo; Jin, Hyung Gon; Kwon, Junhyun; Sun, Gwang Min

doi:10.1007/s10853-015-9379-0

Cited by 15 publications

(14 citation statements)

References 23 publications

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“…2 Fracture strength and elastic modulus of single crystal SiC are 23.8 and 448 GPa, respectively. 34 As a consequence, fracture strength is 5.3% of the elastic modulus of SiC. Elastic modulus of amorphous SiC is 170 GPa, 35 and therefore, the theoretically predicted fracture strength is 9 GPa for amorphous SiC.…”

Section: Discussionmentioning

confidence: 96%

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Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

et al. 2019

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Nanowires (NWs) have been envisioned as building blocks of nanotechnology and nanodevices. In this study, NWs were manipulated using a weasel hair, and fixed by conductive silver epoxy, eliminating the contaminations and damages induced by conventional beam depositions. The fracture strength of the amorphous silicon carbide was found to be 8.8 GPa, which was measured by in situ transmission electron microscopy nanomechanical testing, approaching the theoretical fracture limit. Here, we report that self-healing of mismatched fractured amorphous surfaces of brittle NWs was discovered. The fracture strength was found to be 5.6 GPa on the mismatched fractured surfaces, recovering 63.6% of that of pristine NWs. This is an ultrahigh recovery, due to the limits of reconstruction of dangling bonds on the fractured amorphous surfaces and the mismatched areas. Simulation by molecular dynamics showed fracture strength recovery of 65.9% on the mismatched fractured amorphous surfaces, which is in good agreement with the experimental results. Healing on the mismatched fractured amorphous surfaces is by reorganization of Si-C bonds forming Si-C and Si-Si bonds. The potential energy increases 2.6 eV in the reorganized Si-C bonds, and decreases by 3.2 and 1.9 eV, respectively, in the formed Si-C and Si-2 Si bonds. These findings provide insights for the reliability, design and fabrication of high performance NW-based devices, to avoid catastrophic failure working in harsh and extreme environments.

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Section: Discussionmentioning

confidence: 96%

“…There is a relationship between strength and elastic modulus of SiC . Fracture strength and elastic modulus of single crystal SiC are 23.8 and 448 GPa, respectively . As a consequence, fracture strength is 5.3% of the elastic modulus of SiC.…”

Section: Discussionmentioning

confidence: 99%

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

et al. 2019

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“…Of particular importance to notice is that plastic flow is not observed at room temperature in bulk single crystals of both transition-metal diborides. This clearly indicates that plastic flow observed at room temperature in the vicinity of micro-hardness indents in transition-metal diborides in the early studies 18 – 22 is due to small-scale plasticity that does not occur in bulk but often occurs in small volume of brittle material even at temperatures well below the brittle-ductile transition temperature 26 – 31 . Micropillar compression testing that utilizes specimen of micrometer size 32 – 34 has increasingly been known in recent years to offer one of the best ways to investigate such small-scale plasticity of brittle materials with many accumulated examples 35 – 43 .…”

Section: Introductionmentioning

confidence: 78%

Room-temperature deformation of single crystals of ZrB2 and TiB2 with the hexagonal AlB2 structure investigated by micropillar compression

Chen

Paul

Majumdar

et al. 2021

Sci Rep

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The plastic deformation behavior of single crystals of two transition-metal diborides, ZrB2 and TiB2 with the AlB2 structure has been investigated at room temperature as a function of crystal orientation and specimen size by micropillar compression tests. Although plastic flow is not observed at all for their bulk single crystals at room temperature, plastic flow is successfully observed at room temperature by the operation of slip on {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 3> in ZrB2 and by the operation of slip on {1$${\bar{1}}$$ 1 ¯ 00}<0001> and {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 0> in TiB2. Critical resolve shear stress values at room temperature are very high, exceeding 1 GPa for all observed slip systems; 3.01 GPa for {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 3> slip in ZrB2 and 1.72 GPa and 5.17 GPa, respectively for {1$${\bar{1}}$$ 1 ¯ 00}<0001> and {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 0> slip in TiB2. The identified operative slip systems and their CRSS values are discussed in comparison with those identified in the corresponding bulk single crystals at high temperatures and those inferred from micro-hardness anisotropy in the early studies.

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“…In the present study, the latent hardening parameter, q, for all the slip systems was assumed to [31]). Other relevant data was obtained from the literature [32] and calibration tests performed for orientation 1.…”

Section: Single-crystal Plasticity Theorymentioning

confidence: 99%

Indentation in single-crystal 6H silicon carbide: Experimental investigations and finite element analysis

Pang

Tymicki

Roy

2018

International Journal of Mechanical Sciences

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Silicon carbide (SiC) is a promising material ideally suited for small-scaled devices deployed in harsh environments. SiC is brittle in bulk form, however, at small component length-scales plasticity is observed. A good understanding of deformation behaviour is, therefore, crucial for reliable small-scale component design and fabrication. Here, experimental and numerical analysis of the deformation behaviour of single-crystal 6H-SiC in nanoindentation is presented. Nanoindentation studies are carried out in two orientations of the single-crystal using a Berkovich indenter. Next, a crystal-plasticity theory was implemented in finiteelement (FE) modelling framework to predict the deformation of the hexagonal single-crystal. The validity of the present FE modelling methodology was corroborated through comparison between FE simulations and experimental data in terms of indent profile and loaddisplacement curves. Our results showed that classical crystal plasticity theory can be reliably applied in predicting plastic deformation of ceramic at small scales.

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Room-temperature yield and fracture strength of single-crystalline 6H silicon carbide

Cited by 15 publications

References 23 publications

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

Room-temperature deformation of single crystals of ZrB2 and TiB2 with the hexagonal AlB2 structure investigated by micropillar compression

Indentation in single-crystal 6H silicon carbide: Experimental investigations and finite element analysis

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