Room-temperature “W” diode lasers emitting at λ≈4.0μm

Bewley, W. W.; Vurgaftman, I.; Kim, C. S.; Kim, M.; Canedy, C. L.; Meyer, J. R.; Bruno, John D.; Towner, Frederick J.

doi:10.1063/1.1834714

Cited by 18 publications

(9 citation statements)

References 18 publications

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“…2 (0.37 nm/K). For comparison, a wavelength chirp of 2 nm/K is typically reported for ''W'' structures for the same range of temperature in the pulsed operation mode [10]. Moreover, when comparing the characteristic temperatures of the two laser structures described in this paper, the T 0 measured from the second one is much larger than the one measured from the first one (70 K vs. 32 K).…”

Section: Hole-well Laser Diodes Characterizationmentioning

confidence: 87%

“…2, was demonstrated for this second diodes series. Such a characteristic temperature T 0 is significantly higher than the T 0 of ''W'' lasers (50 K) emitting at the same wavelength range and operating in the pulsed regime [10]. This high T 0 temperature is thought to be related to a very low variation of the energy gap (i.e.…”

Section: Hole-well Laser Diodes Characterizationmentioning

confidence: 99%

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Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μm

Cerutti

Boissier

Grech

et al. 2007

Journal of Crystal Growth

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Section: Hole-well Laser Diodes Characterizationmentioning

confidence: 87%

Section: Hole-well Laser Diodes Characterizationmentioning

confidence: 99%

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μm

Cerutti

Boissier

Grech

et al. 2007

Journal of Crystal Growth

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“…Continued improvements in the design of these lasers show the potential for developing continuous-wave (CW), room-temperature (RT) devices across this range. CW emission up to 257 K has been achieved at λ = 3.7 µm, and above RT pulsed operation has been realised at an emission wavelength of 4.02 µm [3][4][5]. A greater understanding of the loss processes which limit the performance of these devices is the primary aim of the work presented here.…”

Section: Introductionmentioning

confidence: 98%

High pressure studies of mid‐infrared type‐II “W” diode lasers at cryogenic temperatures

O’Brien¹,

Adams

Sweeney

et al. 2006

Physica Status Solidi (b)

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Using high hydrostatic pressure and spontaneous emission characterisation techniques we have investigated the important loss processes in type-II "W" diode lasers, which emit at 3.24 µm at 78 K. Our studies indicate that Auger recombination involving the excitation of holes in the valence band and/or intervalence-band absorption may contribute to the temperature sensitivity of these devices, even at cryogenic temperatures. Defect/impurity related recombination, which was of concern in these structures does not appear to make a significant contribution to the threshold current over the temperature and pressure ranges investigated.

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“…An important contender to fill the gap is the antimonide type-II "W" structure, 4,5 which consists of a Ga(In)Sb hole quantum well (QW) surrounded by two InAs electron QWs, which are in turn bounded by AlGa(As)Sb barrier layers. Previous "W" diodes demonstrated pulsed lasing at room temperature 6,7 and cw operation to 218 K, 8,9 while interband cascade lasers (ICLs) with 12-25 stages of the "W" active region recently lased cw up to 214 K (λ = 3.4 µm) 10 and 237 K (λ = 3.2 µm). 11 The purpose of the work reported in this article is twofold.…”

Section: Introductionmentioning

confidence: 99%

Mid-IR type-II W and interband cascade lasers emitting high CW powers

et al. 2006

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The I-V characteristics, lasing thresholds, and wallplug efficiencies of type-II "W" mid-IR diode lasers from 16 different wafers were studied in order to determine the influence of various device parameters. At T = 90 K, the wallplug efficiency for a 1-mm-long gain-guided device was > 10% and the slope efficiency was 142 mW/A (38% external quantum efficiency). When a 22-µm-wide ridge was lithographically defined on a 5-period "W" laser with a p-GaSb etch stop layer, the maximum cw operating temperature increased to 230 K. We also investigated 5-stage and 10-stage interband cascade lasers containing "W" active quantum wells. For 10-stage devices, the lowtemperature threshold current densities were somewhat higher than in the "W" diodes while at higher temperatures they were slightly lower. The threshold voltage was only ≈ 0.1 V larger than the photon energy multiplied by the number of stages, corresponding to a voltage efficiency of > 96%, while the differential series resistance-area product above threshold was as low as 0.21 mΩ·cm 2 at 100 K. At T = 78 K, the cw slope efficiency was 0.48 mW/A (126% external quantum efficiency), and a maximum cw power of 514 mW was produced by an epi-side-upmounted 2-mm-long 10-stage laser cavity with uncoated facets. A 5-stage 2-mm-long interband cascade laser produced ≈ 700 mW of output power at 80 K, with a maximum wallplug efficiency of 20% per facet.Keywords: diode laser, interband cascade laser, quantum well, mid-infrared. INTRODUCTIONAmbient-temperature cw operation remains unrealized for any electrically-pumped semiconductor laser in the 3.2-3.9 µm spectral region, in spite of the significant progress made by type-I 1 and quantum cascade 2,3 lasers on the short and long wavelength sides, respectively. An important contender to fill the gap is the antimonide type-II "W" structure, 4,5 which consists of a Ga(In)Sb hole quantum well (QW) surrounded by two InAs electron QWs, which are in turn bounded by AlGa(As)Sb barrier layers. Previous "W" diodes demonstrated pulsed lasing at room temperature 6,7 and cw operation to 218 K, 8,9 while interband cascade lasers (ICLs) with 12-25 stages of the "W" active region recently lased cw up to 214 K (λ = 3.4 µm) 10 and 237 K (λ = 3.2 µm). 11The purpose of the work reported in this article is twofold. First of all, a systematic study of "W" diode lasers with designs modified in a variety of ways to probe effects on the electrical and lasing characteristics was conducted.Since the antimonide material system remains relatively immature by comparison with GaAs-and InP-based structures, it has been necessary to address numerous growth and processing issues along the way to improving the laser performance. Most of the present structures were designed for low-temperature emission at λ ≈ 3.2 µm, although a few longer-wavelength devices (λ ≈ 3.8 µm and 4.4 µm) were also fabricated. Both broad gain-guided and narrow ridge geometries were investigated. * vurgaftman@nrl.navy.mil; phone 202-404-8604; fax 202-404-7530

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Room-temperature “W” diode lasers emitting at λ≈4.0μm

Cited by 18 publications

References 18 publications

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μm

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μm

High pressure studies of mid‐infrared type‐II “W” diode lasers at cryogenic temperatures

Mid-IR type-II W and interband cascade lasers emitting high CW powers

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