2017
DOI: 10.1016/j.tsf.2017.02.006
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Room temperature tunability of Mo-doped VO 2 nanofilms across semiconductor to metal phase transition

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Cited by 42 publications
(23 citation statements)
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“…Doped VO 2 films with 0, 1, 3 and 5% of Mo 6+ -ions were synthesised by the same process with the addition of an appropriate amount of MoO 3 (Sigma Aldrich) and melted in a ceramic crucible at 800-900°C for 25-30 min in a muffle furnace in an ambient atmosphere. The molten liquid was immediately transferred into distilled water at 80°C with constant stirring for 3-5 h and then the solution was homogenised in an ultrasonic bath for >1 h. Subsequent to the ageing of 24 h, the V 2 O 5 gel was spin-coated on each cleaned alumina substrate at a spin rate of 3000 rpm for 30 s by three successive coatings [3]. Thin films of VO 2 for irradiation were similarly fabricated by melting 3.7 g of V 2 O 5 (Sigma Aldrich, purity 99.9%) and 5.40 g of H 2 C 2 O 4 •2H 2 O (Sigma Aldrich) in a ceramic crucible at 750°C in a muffle furnace for 30 min and then poured quickly into a beaker containing 30 ml of deionised water placed on a magnetic stirrer.…”
Section: Film Fabricationmentioning
confidence: 99%
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“…Doped VO 2 films with 0, 1, 3 and 5% of Mo 6+ -ions were synthesised by the same process with the addition of an appropriate amount of MoO 3 (Sigma Aldrich) and melted in a ceramic crucible at 800-900°C for 25-30 min in a muffle furnace in an ambient atmosphere. The molten liquid was immediately transferred into distilled water at 80°C with constant stirring for 3-5 h and then the solution was homogenised in an ultrasonic bath for >1 h. Subsequent to the ageing of 24 h, the V 2 O 5 gel was spin-coated on each cleaned alumina substrate at a spin rate of 3000 rpm for 30 s by three successive coatings [3]. Thin films of VO 2 for irradiation were similarly fabricated by melting 3.7 g of V 2 O 5 (Sigma Aldrich, purity 99.9%) and 5.40 g of H 2 C 2 O 4 •2H 2 O (Sigma Aldrich) in a ceramic crucible at 750°C in a muffle furnace for 30 min and then poured quickly into a beaker containing 30 ml of deionised water placed on a magnetic stirrer.…”
Section: Film Fabricationmentioning
confidence: 99%
“…Vanadium dioxide (VO 2 ), a strong electron correlated metal oxide, has been the focus of extensive research because it undergoes first-order thermal reversible structural phase transition between high stable, less symmetric (P21/c), low temperature monoclinic (M1) semiconducting phase and low stable, high symmetric (P42/mnm), high-temperature tetragonal rutile (R) metallic phase (SMT) [1]. This SMT of VO 2 is scientifically exciting and technologically appealing around a phase transition temperature (T t ) of 341 K closest to room temperature than any other material discovered to date in its un-irradiated, un-doped, and bulk state [2][3][4][5].…”
mentioning
confidence: 99%
“…Doping is considered to the most effective strategy to reduce the ζ c of VO 2 , especially for high-valence ions doping (such as Nb 5+ , Mo 6+ , W 6+ , Tb 3+ , etc.) [21][22][23][24]. Chae et al [25] reported that the doped VO 2 with W and Ti using the sol-gel method led to a change of transition temperature and reduces the properties of MIT.…”
Section: Introductionmentioning
confidence: 99%
“…Ion doping process have been developed to try and address this issue. Doping mainly divided into two types: The first type involves the use of high valence state cations such as W 6+ , Mo 5+ , Nb 5+ , which are known to decrease the phase transition temperature by introducing extra electrons into the VO 2 sample [18,19,20]; The second type is to utilizes low valence state cations, such as Al 3+ , Cr 3+ , to increase the phase transition temperature of the VO 2 derived materials [21,22,23]. However, there is no clear explanation currently existing to clarify the beneficial effects of substitution V 4+ ions with Ti 4+ ions or Zr 4+ ions that have the same valence state.…”
Section: Introductionmentioning
confidence: 99%