Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot

Abstract

We demonstrate triggered single photon emission at room temperature from a site-controlled III-nitride quantum dot embedded in a nanowire. Moreover, we reveal a remarkable temperature insensitivity of the single photon statistics, and a g((2))[0] value at 300 K of just 0.13. The combination of using high-quality, small, site-controlled quantum dots with a wide-bandgap material system is crucial for providing both sufficient exciton confinement and an emission spectrum with minimal contamination in order to enable room temperature operation. Arrays of such single photon emitters will be useful for room-temperature quantum information processing applications such as on-chip quantum communication.

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

“…The demonstration of single photon emission at room temperature was recently reported for a GaN QD [4]. Also single photon biexcitonic emission from an InGaN QD in a nanowire at 200 K [5] and an electrically driven InGaN QD in a nanowire exhibiting single photon excitonic emission at 150 K [6] have been reported.…”

Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach

“…The type and density of the TDs were investigated by weak beam dark field TEM imaging. For detailed analysis of the dislocation movement within the crystal structure the sample was cut in the (10-10) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) zone axes. The samples were then tilted to a 2 beam condition in the g = (11-20) and g = (10-10) directions respectively, where only the edge and mixed (edge and screw) type dislocations were visible.…”

Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

“…[1][2][3]5 However, sensitivity of the emission efficiency to temperature prevents their practical implementation. Generation of single photons at elevated temperatures has been achieved by utilizing QDs made of wide-bandgap II-VI materials (up to T ¼ 220 K with (Cd,Zn)Se/ZnSe QD, 6 and 300 K for CdSe/(Zn,S)Se/MgS QD 7 ), group-III nitrides (up to 300 K for GaN/AlN QD 8 ), and some of other III-V material systems (InP/(In,Al)GaP at 80 K (Ref. 9) and GaAs/ (Al,Ga)As QD at 80 K (Ref.…”