Room-temperature thermoelectric materials: Challenges and a new paradigm

Han, Zhijia; Li, Jingwei; Jiang, Feng; Xia, Jiating; Zhang, Bo‐Ping; Li, Jing‐Feng; Liu, Weishu

doi:10.1016/j.jmat.2021.07.004

Cited by 49 publications

(28 citation statements)

References 104 publications

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“…The Zintl phase Mg 3 Bi 2 and its alloys in a La 2 O 3 -type trigonal structure have received attention because of their nontoxicity, high elemental abundancy, and good thermoelectric properties for energy harvesting applications. [6][7][8][9][10][11][12][13][14][15] For example, an average thermoelectric figure of merit of polycrystalline Mg 3þd Sb x Bi 2-x has been reported to be comparable with that of the conventional n-type Bi 2 Te 2.7 Se 0.3 in the temperature range of 50-250 C. 10 Further studies have focused on the improvement of thermoelectric properties near room temperature. 1,11,12,14,16,17 Singlecrystal Mg 3 Bi 2 and its alloys were synthesized by the Mg-flux method.…”

mentioning

confidence: 99%

“…[6][7][8][9][10][11][12][13][14][15] For example, an average thermoelectric figure of merit of polycrystalline Mg 3þd Sb x Bi 2-x has been reported to be comparable with that of the conventional n-type Bi 2 Te 2.7 Se 0.3 in the temperature range of 50-250 C. 10 Further studies have focused on the improvement of thermoelectric properties near room temperature. 1,11,12,14,16,17 Singlecrystal Mg 3 Bi 2 and its alloys were synthesized by the Mg-flux method. 8,13 For vacuum-based thin-film deposition, the relatively high vapor pressure of Mg (of the order of 10 À6 mbar at 250 C and 10 À4 mbar at 330 C) 18 makes it challenging to synthesize pure Mg 3 Bi 2 thin films at high temperatures.…”

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confidence: 99%

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Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering

Sadowski

Zhu

Shu

et al. 2022

Applied Physics Letters

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Mg 3 Sb 2 -based thermoelectric materials attract attention for applications near room temperature. Here, Mg-Bi films were synthesized using magnetron sputtering at deposition temperatures from room temperature to 400 C. Single-phase Mg 3 Bi 2 thin films were grown on c-planeoriented sapphire and Si(100) substrates at a low deposition temperature of 200 C. The Mg 3 Bi 2 films grew epitaxially on c-sapphire and fiber-textured on Si(100). The orientation relationships for the Mg 3 Bi 2 film with respect to the c-sapphire substrate are (0001) Mg 3 Bi 2 k(0001) Al 2 O 3 and [1120] Mg 3 Bi 2 k[1120] Al 2 O 3 . The observed epitaxy is consistent with the relatively high work of separation, calculated by the density functional theory, of 6.92 J m À2 for the Mg 3 Bi 2 (0001)/Al 2 O 3 (0001) interface. Mg 3 Bi 2 films exhibited an in-plane electrical resistivity of 34 lX m and a Seebeck coefficient of þ82.5 lV K À1 , yielding a thermoelectric power factor of 200 lW m À1 K À2 near room temperature.

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confidence: 99%

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confidence: 99%

Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering

Sadowski

Zhu

Shu

et al. 2022

Applied Physics Letters

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“…Among all compositions, BO-0.05T -the highly doped ceramic-shows the highest electrical conductivity, i.e., 2.0 × 10 −9 μS/m which exhibits the presence of free hole carriers and porosities (Li et al, 2000;Park et al, 2009;Koçyiğit et al, 2020). It can be observed that with the increase in dopant (Ti) concentration, the conductivity of the samples has also increased which is favourable for the high thermoelectric performance, i.e., figure of merit (ZT) (Koumoto et al, 2013;Shi et al, 2020;Han et al, 2022).…”

Section: Resultsmentioning

confidence: 99%

“…Nano-crystallization and low-dimensional processing of thermoelectric materials have proved to be important factors for high thermoelectric performance since it helps to increase the density of state and phonon scattering that lead to an increase in the Seebeck coefficient and electric conductivity respectively while maintaining thermal conductivity (Li et al, 2022;Yang et al, 2022). However, the measurement error in the figure of merit that has been reported is of major concern due to the multiple transferring of samples during testing as it affects the intrinsic physical properties (Han et al, 2014;Han et al, 2022;Li et al, 2022;Yang et al, 2022).…”

Section: Introductionmentioning

confidence: 99%

Different concentrations of Ti4+ as a donor and electronic properties of Bi2-xTixO3

Alshoaibi

Fayaz²,

Mohsin³

et al. 2023

Front. Mater.

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Bi(2-x)TixO3 (x = 0, 0.01, 0.03. & 0.05) (BO-xT) ceramics are prepared by conventional solid-state route followed by low sintering temperatures. X-ray diffraction analyses show the presence of the monoclinic phase of Bi2O3. The electrical conductivities at room temperature concerning the frequency (ranging from 25 kHz to 5 MHz) and Seebeck Coefficient ranging from 50°C to 400°C were measured. With an increase in Ti (dopant) content, the conductivity and Seebeck Coefficient increased with the temperature increment. The BO-0.03T has the highest Seebeck value (47 μV/°C), which shows a higher carrier concentration. In terms of electrical conductivities, the BO-0.05T ceramic shows the maximum electrical conductivity, i.e. 2.0 × 10−9 μS/m as compared to other samples, which exhibit the presence of free electrons. Moreover, relative permittivity (dielectric constant) and dielectric loss are also measured concerning the frequency at room temperature to investigate the dielectric behaviour of the ceramics. This low-temperature sintering ceramics will open new applications in the domain of electronic materials.

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“…Currently, Mg‐based materials, including Mg 3 (Sb,Bi) 2 , [ 13–17 ] Mg 2 (Si,Ge,Sn), [ 18–23 ] and MgAgSb [ 24,25 ] are considered promising TE materials because of their earth abundance and low toxicity. Among the aforementioned materials, Mg 3 Sb 2 ‐based alloys exhibit distinct properties in both n‐type and p‐type TE materials, particularly n‐type.…”

Section: Introductionmentioning

confidence: 99%

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Liu

et al. 2023

Advanced Materials

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Mg3(Sb,Bi)2 is a potential nearly‐room temperature thermoelectric compound composed of earth‐abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg) in Mg3(Sb,Bi)2. This study proposes an approach to mitigating the negative scattering effect of VMg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and Cs‐corrected scanning transmission electron microscopy analyses indicated that the VMg tends to coalesce due to the introduced Bi vacancies (VBi). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic VMg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg3(Sb,Bi)2 by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg3(Sb,Bi)2 as an emerging thermoelectric material.

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Room-temperature thermoelectric materials: Challenges and a new paradigm

Cited by 49 publications

References 104 publications

Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering

Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering

Different concentrations of Ti4+ as a donor and electronic properties of Bi2-xTixO3

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

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Room-temperature thermoelectric materials: Challenges and a new paradigm

Cited by 49 publications

References 104 publications

Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering

Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering

Different concentrations of Ti4+ as a donor and electronic properties of Bi2-xTixO3

Bi‐Deficiency Leading to High‐Performance in Mg3(Sb,Bi)2‐Based Thermoelectric Materials

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Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials