Room-Temperature Spin-Transport Properties in an 
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 Quantum Dot Spin-Polarized Light-Emitting Diode

Etou, Kohei; Hiura, Satoshi; Park, Soyoung; Sakamoto, Kazuya; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

doi:10.1103/physrevapplied.16.014034

Cited by 10 publications

(2 citation statements)

References 53 publications

(77 reference statements)

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“…The first feature is that the InGaAs‐based active layer is sandwiched between the AlGaAs barriers, which behave as carrier blocking layers. [ 28 ] Optically generated carriers can be confined in the active layer due to the promoted reinjection of carriers that are thermally escaped from the QDs to the GaAs barriers. [ 27 ] This structure leads to a strong luminescence of the QDs even at room temperature.…”

Section: Resultsmentioning

confidence: 99%

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

Park

Hiura

Takayama

et al. 2022

Adv Elect Materials

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Manipulation of the optical spin orientation in semiconductors is a key technology for realizing spin‐based photoelectric information processing. Application of magnetic field is a simple method to control the spin polarization degree through Zeeman splitting. However, this effect can only be achieved at cryogenic temperatures and in a strong magnetic field. Here, room‐temperature voltage control of optical polarization in the range of 3–15%, corresponding to a 12–60% change in relative spin polarization is demonstrated. For this, a III‐V semiconductor quantum dot tunnel coupled with a quantum well spin reservoir is used. The spin‐flip scattering rate within quantum dots is electric‐field‐controlled in the time domain of several tens of picoseconds. This is achieved by precise control of the tunnel injection efficiency of electrons and holes via coupled potential modification. The findings will pave the way for the generation of ultrafast spin‐modulated optical signals by the electric field effect.

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Section: Resultsmentioning

confidence: 99%

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

Park

Hiura

Takayama

et al. 2022

Adv Elect Materials

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“…The MCPEL generated using an EL device containing optically inactive emitters, by injecting unpolarized spins (electrons and/or holes) from diamagnetic electrodes under 1.0 T EMF, could be compared to the CPL spectra from spinlight-emitting diodes (spin-LEDs) [67][68][69][70][71] and spin-laser diodes (spin-LD). [73] There, CPL is generated by injecting spin-polarized electrons and/or holes from ferromagnetic electrodes and/or Fe 3 O 4 nanoparticles, producing an internal magnetic field.…”

Section: Resultsmentioning

confidence: 99%

External Magnetic Field Driven, Ambidextrous Circularly Polarized Electroluminescence from Organic Light Emitting Diodes Containing Racemic Cyclometalated Iridium(III) Complexes

et al. 2022

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This work reports the development of external magnetic field (EMF) driven, ambidextrous, circularly polarized electroluminescence (CPEL) devices, by embedding racemic mixtures of phosphorescent organoiridium(III) emitters in the active emitting layer. Homoleptic tris‐cyclometalated Ir(III)(ppy)3 and heteroleptic bis‐cyclometalated Ir(III)(ppy)2(acac) (ppy=2‐phenylpyridinate, acac=acetylacetonate) were used as the representative organoiridium(III) compounds. Chiroptical inversion of CPEL was influenced by the ligand environment in the Ir(III) complexes (homoleptic or heteroleptic), as well as the Faraday geometry.

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Solution‐Processed and Room‐Temperature Spin Light‐Emitting Diode Based on Quantum Dots/Chiral Metal‐Organic Framework Heterostructure

Mustaqeem

Chou

Kamal

et al. 2023

Adv Funct Materials

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Spin optoelectronics is an indispensable key for the future development of spintronics. In conventional spin light emitting diodes (LEDs), spin‐polarized carrier pairs are injected electrically into the light emitting layer and create circularly polarized light (CPL). Generally, spin‐polarized carriers are accomplished using ferromagnetic contacts or applying an external magnetic field, which will produce several drawbacks, including low temperature operation, low spin‐polarized carriers injection efficiency, etc. To circumvent the existing shortcomings, here, an alternative approach is proposed and achieves spin‐polarized LEDs at room temperature based on quantum dots (QDs)/chiral metal‐organic framework heterojunction without using ferromagnetic contacts or magnetic fields. The spin‐polarized injected layer composed of self‐assembled monolayer (SAM)/Chiral‐MOF ([Sr(9,10‐adc)(DMAc)2]n)) film, which produces spin‐polarized holes with spin orientation, determining the polarization and strength of circularly polarized electroluminescence (CP‐EL). The spin‐QLED emits CP‐EL at a rate of 12.24% efficiency, which provides an excellent alternative to generate new functionality for conventional QLEDs. The approach is anticipated to be very useful, enabling to offer a general methodology for generating not yet realized spin optoelectronic devices.

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Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode

Cited by 10 publications

References 53 publications

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

External Magnetic Field Driven, Ambidextrous Circularly Polarized Electroluminescence from Organic Light Emitting Diodes Containing Racemic Cyclometalated Iridium(III) Complexes

Solution‐Processed and Room‐Temperature Spin Light‐Emitting Diode Based on Quantum Dots/Chiral Metal‐Organic Framework Heterostructure

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