Room-temperature, RF-activated, quantum effects via engineered defect sites in thin-film AlN, Al2O3, and SnOx
Farhana Anwar,
Ronald A. Coutu,
Rafee Mahbub
Abstract:The behavior of a sine wave propagated through thin films of aluminum nitride (AlN), aluminum oxide (Al2O3), and tin oxide (SnOx) with engineered buried defect sites may suggest quantum excitation and defect-mediated waveform modulations. Two distinct methods to induce these buried defects, etch pattern defects (EPD) and indentation pattern defects (IPD), were employed to detect these interactions. All the experiments were conducted at room temperature (21 °C) over a frequency range between 5 and 1000 kHz. In … Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.