Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

“…Angle-resolved HAXPES analysis revealed that V O in IGZO:H was much lower than that in IGZO, especially in the region near the film surface (Figure e). Both the increase of ϕ b and the decrease of V O at the Ag x O/IGZO:H interface reduce the tunneling current through the junction barrier due to trap-assisted tunneling. ,,, Moreover, the HAXPES analysis also revealed that the density of near-CBM states in IGZO:H was lower than that in IGZO after annealing at a T ann of 150 °C. The reduction of near-CBM states in IGZO:H also contributed to reduce the tunneling current in the SDs.…”

“…Amorphous oxide semiconductors (AOSs), particularly In–Ga–Zn–O (IGZO), have received considerable attention owing to their superior electrical properties (μ FE > 10 cm 2 V –1 s –1 ) even when deposited at room temperature. − Therefore, they are considered to be promising for developing future flexible devices. To date, extensive effort has been made to develop IGZO-based thin-film transistors (TFTs) for the backplane driver of flat-panel displays. , In contrast to TFTs, very few studies have been reported on IGZO-based Schottky diodes (SDs) despite the wide use of SDs in electronic circuits, microwave communications, memory storage, radio frequency identification (RFID) tags, and biosensors. − This is due to the effects of defects in IGZO such as oxygen vacancies and hydroxyl groups . Additionally, oxygen-poor regions are formed by the reduction of IGZO when a metal comes in contact with it .…”

Room‐Temperature Processed Lateral Trench‐Metal–Insulator–Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a‐Ga2O3) Thin Films on Single‐Crystal Silicon <100>

“…Additionally, C–V measurements were carried out to extract the Schottky barrier height and doping profile of the fabricated diode given by Equation () [ 29,47 ] where ε s is the static dielectric constant of a‐ Ga 2 O 3 , ε 0 is the dielectric constant of vacuum, A is the active area of the diode, N dep represents charge density in the depletion region (or the background doping density), and φ b is the built‐in potential at Schottky junction. The relative dielectric constant of a‐ Ga 2 O 3 used was 9.9 at room temperature.…”

“…[ 22,27 ] Also, room‐ or low‐temperature deposition has already been rapidly adopted because of its process compatibility and economic advantages in technology development. [ 11,15,28–31 ] Despite numerous research studies on AOSs, not many high‐performance SBDs have been reported for power electronics applications. The previously reported SBDs have shown high specific on resistance (Ron_sp) and/or rather poor breakdown voltage (BV).…”

Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light

“…Solution-based indium gallium zinc oxide (IGZO) has been considered a strong candidate for next-generation electronic devices owing to its high field-effect mobility, outstanding electrical uniformity, cost-effective low-temperature solution processing, and mechanical flexibility. − Therefore, diverse applications such as photonics, sensors, thin-film transistors (TFTs), and logic circuits have been demonstrated. − Especially the relatively large band gap of IGZO, which exceeds 3 eV, makes it possible to use this material to detect ultraviolet (UV) light. − Diverse studies concerned with the improvement of the UV photosensing characteristics have been reported. For instance, a bilayer structure of IGZO/HfZrO could depress its dark current, leading to a considerable enhancement in photosensitivity .…”