Room-temperature preparation and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on flexible polyimide substrates via pulsed laser deposition method

Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate

“…The reported amorphous high ε r thin films, including BaTiO 3 , Pb­(Zr,Ti)­O 3 , Y 2 Cu­TiO 6 , ZrTiO 4 , HfO 2 , Hf­LaO x , and YScO 3 , exhibit dielectric constants typically in the range of ∼10 to ∼130, which originates from ionic or dipolar (orientational) polarization. Interestingly, there have been very limited reports dealing with high ε r thin films deposited on flexible polymer substrates. , Most of the studies on the amorphous dielectric thin films were conducted on the basis of a rigid substrate like Si.…”

Bending Strain-Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ′-Fe4N/Muscovite Epitaxial Heterostructures toward Flexible Spintronics

“…Flexible spintronics combines the conventional spintronics with the advantages of mechanically flexible electronics due to light weight, chemical inertness, thermal conductivity, multifunction, and environmental friendliness. − Lots of flexible magnetic materials have been widely investigated for wearable spintronic devices, such as the giant magnetoresistance sensors, , magnetoelectric devices, , and skin electronics. − Many methods have been used to produce large strains, which can exert significant effects on magnetic properties, such as dual-ion-tuned electronic structures, depositing films on various substrates, and strain-mediated magnetoelectric coupling effects . In flexible spintronics, the magnetic and electronic transport properties of the ferromagnetic films are mainly tailored via applying the bending strains (>1.0%), − which is larger than the piezoelectric strain (<0.2%) in PbZr x Ti 1‑ x O 3 . , However, the integration of epitaxial films on flexible organic substrates is quite difficult due to the lower fabrication temperatures (<300 °C) and lattice mismatch. − Meanwhile, the large strain-induced magnetization and resistance change are also not easy to achieve because most of the ferromagnetic films deposited on flexible substrates are polycrystalline or amorphous. The poor lattice symmetry, low anisotropy, and complicated grain boundaries in the polycrystalline or amorphous films, such as flexible polycrystalline Fe 81 Ga 19 and amorphous Co 40 Fe 40 B 20 films, ,− make them have a weaker response to the strains, which can result in a smaller modulation on the magnetic and electronic transport properties than that in the epitaxial films. , Since, the epitaxial films can effectively transfer the strain from the substrate, the epitaxial ferromagnetic films with a large magnetization, anisotropy magnetoresistance (AMR), and anomalous Hall resistivity are more desirable. − Meanwhile, the muscovite simplified as “mica” [KAl 2 Si 3 AlO 10 )­(OH) 2 ] has been paid much attention to achieve a large strain due to its large stretchability. − The melting point of mica is as high as 1300 °C, which is necessary to fabricate the epitaxial ferromagnetic films. ,,, …”

High-Performance Polymer Type Capacitors

“…Mo et al [88] prepared Bi 3.95 Er 0.05 Ti 3 O 12 (BErT) based thin films on flexible polyimide (PI) substrates at room temperature by pulsed laser deposition. The BErT thin films obtained under low oxygen pressures were dense, uniform, and crack-free with an amorphous structure.…”

“…BaTiO 3 -MWNT/PI composites [84] increased the dielectric constants sharply. BErT/PI based thin films gave encouraging results in flexible optoelectronic devices and embedded capacitors [88]. High temperature, flexible polymer film capacitor applications used for developing low-cost processes for memory devices that employ relatively inexpensive materials, and Cu based nanocomposite applications demonstrated very good performances [70].…”