Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

Теппе, Ф.; Knap, W.; Veksler, D.; Shur, M. S.; Дмитриев, А. П.; Kachorovskii, V. Yu.; Rumyantsev, Sergey

doi:10.1063/1.2005394

Cited by 155 publications

(115 citation statements)

References 15 publications

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“…(ii) strong nonlinearity of current flowing along the channel governed by a gate, (iii) possibility of tuning the frequency of 2D plasma waves excited in the channel under the gate by varying the gate potential [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

et al. 2011

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Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f 0 ± 10 GHz (with f 0 from 0.3 up to 0.5 THz) detected by a Si--bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.

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Section: Introductionmentioning

confidence: 99%

THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

et al. 2011

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“…Both these effects lead to increasing of the effective quality factor wt, which as mentioned before, should be higher than unity to get resonant detection. As discussed in our earlier work [16,17], with increase of the current, the electron drift velocity v increases leads to the increase of an effective relaxation rate given by 1…”

Section: Room Temperaturementioning

confidence: 78%

“…Recently, Teppe and co-workers have demonstrated room-temperature, resonant detection of sub-terahertz radiation by 250 nm gate length GaAs/AlGaAs transistor [17]. They have shown that the detection regime, initially nonresonant, becomes resonant even at 300 K by increasing the drain current and driving the transistor into the current saturation region.…”

Section: Room Temperaturementioning

confidence: 99%

Plasma wave resonant detection of terahertz radiations by nanometric transistors

Knap

Fatimy

Torres

et al. 2007

Low Temperature Physics

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We report on resonant terahertz detection by two-dimensional electron plasma located in nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted to GaAs-based devices as the most promising from the point of view of the electron mobility. The resonant detection was reported, however, only in the sub-THz range. According to predictions of the Dyakonov-Shur plasma wave detection theory an increase of the detection frequency can be achieved by reducing the length or increase the carrier density in the gated region.We demonstrate that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors. For the first time the tunability of the resonant signal by the applied gate voltage is demonstrated. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel (Dyakonov-Shur theory). We also show that by increasing of the drain-to-source current leads to a transformation of the broadband detection to a resonant and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible application of detection by nanotransistors in different types of THz spectroscopy research.

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“…For ω 0 τ 1, the linewidth 1/τ is small and FET operates as a resonant detector. Resonant and non-resonant detection of THz radiation by two-dimensional plasma waves was demonstrated several times using a commercial GaAs/AlGaAs FET at cryogenic [5] and room temperature [6][7][8] and using different laboratory THz sources such as backward wave oscillator (BWO), Gunn diodes, molecular lasers, etc. .…”

Section: Introductionmentioning

confidence: 99%

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

et al. 2011

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We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.

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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

Cited by 155 publications

References 15 publications

THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

Plasma wave resonant detection of terahertz radiations by nanometric transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

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