Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

Abstract

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the cΓ1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

Ge/Si photodetectors and group IV alloy based photodetector materials

“…Experimental data on PL in strained Ge has been reported recently in Chen et al (2009). We note however that the band gap calculated from refined theory is only half of the energy corresponding to PL peak of 0.84 eV.…”

Etch characteristics of Si1−x Ge x films in HNO3:H2O:HF

“…The fully strained 60 nm Si 0.75 Ge 0.25 film was grown directly on Si(100) substrates. Different from depositing relaxed Si 1x Ge x films on bulk Si substrate [10][11][12], our relaxed Si 1x Ge x films were grown with uniform Ge composition on 100 mm diameter SOI substrates. The thicknesses of the relaxed Si 0.75 Ge 0.25 , Si 0.6 Ge 0.4 and Si 0.4 Ge 0.6 layers were 2.0 m, 1.5 and 1.0 m, respectively.…”

Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

“…From the peak positions, the inplane lattice constant is evaluated to be 0.5664 nm for n-Ge/i-Ge layer, corresponding to the in-plane tensile strain of ~0.47% (26)(27)(28)(29)(30). This result can be explained by the difference of thermal expansion coefficient between Si (2.6×10 -6 °C -1 ) and Ge (5.6×10 -6 °C -1 ).…”