Room-Temperature Photoluminescence of Amorphous Hydrogenated Silicon Carbide Doped With Erbium

Terukov, E. I.; Kudoyarova, V.kh.; Kuznetsov, A; Fuhs, W.

doi:10.1007/978-94-011-5496-3_56

Cited by 2 publications

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“…Secondly, the technique of deposition of thin a-Si:H films is well developed and compatible with the integrated silicon technology. Thirdly, aSi(Er):H exhibits enhanced intensity and weak temperature quenching of the 1.54 jim photoluminescence (PL), as compared with crystalline silicon [4,5]. Nevertheless, many problems related to optimizing the process of preparation of effectively emitting a-Si(Er):H remain to be solved.…”

Section: Introductionmentioning

confidence: 97%

Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

et al. 1998

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Cumulative thermal annealing (TA) changes the photoluminescence (PL) intensity in erbium-doped a-Si:H films prepared using DC magnetron sputtering of a composite Er-Si target at substrate temperature 200 'C. The intensity of erbium-related 1.54 jim PL at 77 K is enhanced about 50 times after TA at 300'C for 15 min in nitrogen atmosphere. No erbium-related PL is observed after TA at T_>500 'C. The TA process is discussed in terms of a model of partial structural rearrangement in an a-Si(Er):H amorphous network.

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Section: Introductionmentioning

confidence: 97%

Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

et al. 1998

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“…The interest in materials based on erbium-doped silicon is due to the possibility of creating silicon optoelectronic devices operating in the 1.5 µm band coinciding with the minimumloss spectral range in optical communication lines. Films of erbium-doped hydrogenated amorphous silicon [a-Si(Er):H] show higher photoluminescence (PL) intensity at a wavelength of 1.5 µm and weaker temperature quenching, as compared with crystalline silicon [1,2]. Two principal techniques are used to introduce erbium into a-Si:H: ion implantation [3] and magnetron sputtering of a mosaic erbium-silicon target in an atmosphere of silane [1,4].…”

Section: Introductionmentioning

confidence: 99%

a-Si(Er):H films prepared by metalorganic assisted PECVD with strongly hydrogen-diluted silane

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Голубев

Medvedev

et al. 2000

Semicond. Sci. Technol.

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The electronic and photoluminescence (PL) properties of a-Si(Er):H films prepared by metalorganic (Er(HFA) 3 *DME) assisted PECVD with strongly hydrogen-diluted silane (2% SiH 4 in H 2 ) at T S = 250 • C are discussed. The conductivity (10 −9 −10 −2 −1 cm −1 within the range of 140-385 K), Tauc optical gap (1.8-2.1 eV), Raman and IR optical spectra, and the wavelength of erbium-related PL correlate with the amount of Er(HFA) 3 *DME compound sublimed during the deposition process.

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Room-Temperature Photoluminescence of Amorphous Hydrogenated Silicon Carbide Doped With Erbium

Cited by 2 publications

References 0 publications

Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

a-Si(Er):H films prepared by metalorganic assisted PECVD with strongly hydrogen-diluted silane

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