Room temperature photoemission up to a wavelength threshold of 2.3 µm from n⁺-InAs_0.4P_0.6/p⁻-InAs_0.4P_0.6/p⁻-ln_0.7Ga_0.3As field-assisted photocathode

Abstract

Room temperature photoemission up to a long-wavelength threshold of 2.3 µm was obtained from an n+-InAs0.4P0.6/p−-InAs0.4P0.6/p−-In0.7Ga0.3As field-assisted photocathode. The quantum efficiency at 2.1 µm is 2.47 × 10−1%. The results show that the field-assisted photocathode with its pn junction is suitable not only for achieving high quantum efficiency performance but also for extension of the long infrared threshold wavelength. The temperature dependences of both the quantum efficiency and the dark current for the photocathode are also presented.

Enhancement of photoemission capability and electron collection efficiency of field-assisted GaN nanowire array photocathode

“…Under the sloping band induced by an external field, photoelectrons will be accelerated towards the top surface. It can be concluded that the two-dimensional continuity equation referring to electron diffusion and shifting is [19]:…”