Room-temperature optoelectronic response of Ni supersaturated p-type Si processed by continuous-wave laser irradiation

Chen, Rong; Fan, Baodian; Pan, Mingyang; Cheng, Qijin; Chen, Chao

doi:10.1016/j.matlet.2015.10.018

Cited by 8 publications

(7 citation statements)

References 12 publications

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“…However, it is well known that the concentration of impurities should exceed the so-called Mott-Limit to form an intermediate band [15,45]. As matter of fact, several papers have shown that a supersaturated Si based material with very high dopant concentration above the equilibrium solubility limit is needed to obtain an IB [16,[21][22][23]46]. In this work formation energies were estimated in concordance with previous works dealing with implanted Si-compounds [19,39] and other IB materials previously studied by our group [47][48][49][50].…”

Section: Formation Energiesmentioning

confidence: 99%

“…Transition metals introduce deep levels in the bandgap of the host silicon [14]. As matter of fact, Si highly doped with transition elements such as Ti [15][16][17][18][19], V [20], Ni [21] or Au [22,23] have demonstrated strong sub-bandgap optical absorption as well as an increase in the high infrared absorption features at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Previous works shown that materials based on doped-Si with transition metals such as Ti [15][16][17][18][19], Ni [21], Au [22,23] or Co [26] would lead to the formation of a new band within the gap of Si host semiconductor. Recently, an extended photoresponse up to the infrared region for vanadium hyperdoped silicon obtained by ion implantation has been reported [20].…”

Section: Introductionmentioning

confidence: 99%

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First principle study of V-implantation in highly-doped silicon materials

García

Casanova-Páez

Palacios

et al. 2017

Computational Materials Science

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Density Functional Theory (DFT) has been used to study structural and electronic properties of new compounds based on V-implanted Si and their potential as infrared photodetectors. Effects derived from the implantation of V on bulk-Si are calculated at different configurations, i.e., substitutional (V Sl ) and interstitial (V,) positions as well as the effect of Si vacancies. Despite all implantation processes are energetically penalized, V,-implanted compound leads to the lowest formation energies. Furthermore, interstitial implantation in the vicinity of a Si vacancy would lead to a highly favored process. The analysis of the electronic structure shows that V r implanted compounds own an intermediate band (due to t 2g states of vanadium atom), which allows new electronic transitions below 1.0 eV. To deal with the bandgap underestimation of common DFT methods, quasiparticle calculations have been applied via the G 0 W 0 approximation. Applied correction to the bandgap based on GW has considerably improved theoretical results compared to experimental ones. The investigation of the absorption features points out that the absorption response can be extended up to infrared region via sub-gap transitions across the intermediate band. This work highlights the potential of V-implanted silicon based materials with infrared response.

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Section: Formation Energiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

First principle study of V-implantation in highly-doped silicon materials

García

Casanova-Páez

Palacios

et al. 2017

Computational Materials Science

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show abstract

“…Batalov et al [71] used recoil-atom implantation method to fabricate Fe-hyperdoped Si, which utilized Xe + ion beam to knock out Fe atoms from target to achieve incorporation of Fe into Si. The SIMS results showed that the utmost Fe concentration reached 1.7 × 10 22 cm -3 (4 nm depth), which was well beyond the equilibrium solubility of Fe in Si (3 × 10 16 cm -3 at 1300 °C).…”

Section: Othersmentioning

confidence: 99%

Hyperdoped silicon: Processing, properties, and devices

Tong¹,

Bu²,

Zhang³

et al. 2022

J. Semicond.

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Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attracting great interest since the tuning of semiconductor properties increasingly relies on extreme measures. In this review we focus on hyperdoped silicon (Si) by introducing methods used for the hyperdoping of Si such as ion implantation and laser doping, discussing the electrical and optical properties of hyperdoped bulk Si, Si nanocrystals, Si nanowires and Si films, and presenting the use of hyperdoped Si for devices like infrared photodetectors and solar cells. The perspectives of the development of hyperdoped Si are also provided.

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“…Furthermore, compared with some conventional diffusion processes such as ion implantation, which requires photolithography, etching, and other processes, laser-induced diffusion is just a one-step process. Chen et al [21] used Nd:YAG lasers for laser irradiation to reap supersaturated Ni doping on the p-type silicon wafer substrate; Aoki et al [22] efficiently fabricated the homogeneous zinc oxide p-n junctions using the KrF laser induction, which showed ultraviolet luminescence; Choi et al [23] produced the p-doped single-layer graphene using the XeCl laser; Tian et al [24] used the Nd:YAG laser and excimer laser to realized N doping and Al doping in SiC, respectively. It is also worth pointing out that the laser-induced methods have a wide range of applications in magnetic materials.…”

Section: Introductionmentioning

confidence: 99%

Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

et al. 2023

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The doping of ZnO has attracted lots of attention because it is an important way to tune the properties of ZnO. Post-doping after growth is one of the efficient strategies. Here, we report a unique approach to successfully dope the single crystalline ZnO with Ag by the laser-induced method, which can effectively further post-treat grown samples. Magnetron sputtering was used to coat the Ag film with a thickness of about 50 nm on the single crystalline ZnO. Neodymium-doped yttrium aluminum garnet (Nd: YAG) laser was chosen to irradiate the Ag-capped ZnO samples, followed by annealing at 700℃ for two hours to form ZnO:Ag. The 3D information of the elemental distribution of Ag in ZnO was obtained through time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS and core-level X-ray photoelectron spectroscopy (XPS) demonstrated that the Ag impurities could be effectively doped into single crystalline ZnO samples as deep as several hundred nanometers. Obvious broadening of core level XPS profiles of Ag from the surface to depths of hundred nms was observed, indicating the variance of chemical state changes in laser-induced Ag-doped ZnO. Interesting features of electronic mixing states were detected in the valence band XPS of ZnO: Ag, suggesting the strong coupling or interaction of Ag and ZnO in the sample rather than their simple mixture. The Ag-doped ZnO also showed a narrower bandgap and a decrease in thermal diffusion coefficient compared to the pure ZnO, which would be beneficial to thermoelectric performance.

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Room-temperature optoelectronic response of Ni supersaturated p-type Si processed by continuous-wave laser irradiation

Cited by 8 publications

References 12 publications

First principle study of V-implantation in highly-doped silicon materials

First principle study of V-implantation in highly-doped silicon materials

Hyperdoped silicon: Processing, properties, and devices

Electronic and thermal properties of Ag-doped single crystal zinc oxide via laser-induced technique

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