Room temperature operation of InAs/GaSb SLS infrared photovoltaic detectors with cut-off wavelength ~5 μm

Plis, E.; Annamalai, Senthil; Posani, K. T.; Lee, S. J.; Krishna, S.

doi:10.1117/12.669172

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…Furthermore, keeping the resistance of the device to an optimum value by adjusting the barrier thicknesses, that maintains the low noise as well as a high responsivity, will improve the D* by an additional factor of 3 or more improving the D* to about 10 9 Jones, make this device competitive with the reported photovoltaic devices operates under low applied bias voltage. 14 Additionally an improvement factor of $15 can be expected via enhancing the absorption using surface plasmon effects; theoretical models have predictions of around 20 times enhancement of absorption via plasmon effects. 15,16 The result is a total enhancement with a factor of 10 4 .…”

Section: Discussionmentioning

confidence: 99%

Photovoltaic infrared detection with p-type graded barrier heterostructures

Pitigala

Matsik

Perera

et al. 2012

Journal of Applied Physics

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Articles you may be interested inCorrelation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect J. Appl. Phys. 98, 044510 (2005); 10.1063/1.2006990 AlGaAs emitter ∕ GaAs barrier terahertz detector with a 2.3 THz threshold Appl. Phys. Lett. 86, 071112 (2005); 10.1063/1.1867561Quantum-well infrared photodetectors with digital graded superlattice barrier for long-wavelength and broadband detection Appl.Photovoltaic infrared detectors have significant advantages over photoconductive detectors due to zero bias operation, requiring low power and having reduced low frequency noise. They also exhibit no thermally assisted tunneling currents, leading to higher operating temperatures. p-type emitter/ graded barrier GaAs/Al x Ga 1Àx As structures were tested as photovoltaic detectors in the infrared region, operating under uncooled conditions and without an applied bias voltage. A photovoltaic responsivity of 450 mV/W was obtained with a detectivity (D*) of 1.2 Â 10 6 Jones at a peak wavelength 1.8 lm at 300 K. Responsivity and D* increased to $1.2 V/W and 2.8 Â 10 6 Jones, respectively, at 280 K. A non-linear improvement in responsivity was observed with increased emitter thickness. V C 2012 American Institute of Physics. [http://dx.

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Section: Discussionmentioning

confidence: 99%

Photovoltaic infrared detection with p-type graded barrier heterostructures

Pitigala

Matsik

Perera

et al. 2012

Journal of Applied Physics

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“…R d A product is the dynamic resistance‐area product that is used for barrier detectors where an applied bias is required to achieve proper responsivity. Figure compares the R d A product to “Rule 07” for barrier and nonbarrier PDs based on Ga‐free [ 163–165,238 ] and Ga‐containing [ 68,112,174,182,239 ] T2SL at HOT of 300 K in the MWIR spectral range. Generally, it can be seen that the RA performance of T2SL PDs is approaching the performance level of the current state‐of‐the‐art MCT detectors.…”

Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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“…Unlike the formation of the InSb-like IFs, the average lattice constant of the SL increases slightly, which could partially compensate for the strain in the SL. Promising device performance reported in the literature with IFs such as GaAs-like, − InSb-like, − and ternary/quaternary. , Out of these, the InSb-like IF is the most implemented scheme due to its strain compensation ability, which arises from the +6.3% lattice mismatch between InSb and GaSb, acting against the −0.6% lattice mismatch between InAs and GaSb. Theoretically, strain compensation in InAs/GaSb T2SL can be achieved by choosing the InSb IF thickness around 10% of the InAs thickness.…”

Section: Introductionmentioning

confidence: 99%

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Alshahrani

Kesaria

Jiménez

et al. 2023

ACS Appl. Mater. Interfaces

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Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.

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Room temperature operation of InAs/GaSb SLS infrared photovoltaic detectors with cut-off wavelength ~5 μm

Cited by 3 publications

References 3 publications

Photovoltaic infrared detection with p-type graded barrier heterostructures

Photovoltaic infrared detection with p-type graded barrier heterostructures

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

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