Room temperature operation of InAs∕AlSb quantum cascade lasers

Teissier, R.; Barate, D.; Vicet, A.; Alibert, C.; Баранов, А. Н.; Marcadet, X.; Renard, Charles; Garcia, Michel; Sirtori, Carlo; Revin, D.G.; Cockburn, J. W.

doi:10.1063/1.1768306

Cited by 85 publications

(39 citation statements)

References 10 publications

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“…14 Devices with Sb-containing barriers on both InAs substrate [14][15][16] as well as on InP substrate [17][18][19] are promising for either increasing the electron confinement or reducing the emission wavelength, and above room temperature pulsed operation on both substrates was recently reported. 16,18 Since the realization 13 of the GaAs-based quantum cascade laser, an impressive extension of the attainable infrared frequency range has been achieved and can be operated at wavelengths as long as 160 m. 20 The design of QCLs based on GaAs/ AlGaAs can be made very flexible by varying the Al content due to naturally occurring near lattice matched material system across the full range of Al contents. Hence, following the first terahertz QCL, 21 several laser designs based on 15% Al content in the barriers were presented, approaching high temperature pulsed operation 22 ͑137 K͒ and above 23 or close to 24 liquid nitrogen temperature cw operation.…”

Section: Introductionmentioning

confidence: 99%

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

Jovanović

Höfling

Indjin

et al. 2006

Journal of Applied Physics

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A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/ AlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of ͑4 -6.5͒ ϫ 10 11 cm -2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found.

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Section: Introductionmentioning

confidence: 99%

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

Jovanović

Höfling

Indjin

et al. 2006

Journal of Applied Physics

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“…Similar structures reported in literature often employ special shutter sequences at each interface to minimize the cross incorporation of the group V materials and thereby enhance the quality of the interface. [17][18][19] These growth interrupts, however, significantly prolong the growth time, e.g., with respect to the sequence described in Ref. 20 by 50% for this sample.…”

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confidence: 99%

InAs/AlAsSb based quantum cascade detector

Reininger

Zederbauer

Schwarz

et al. 2015

Applied Physics Letters

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In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 107 Jones at T = 300 K.

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“…In order to exploit the beneficial properties of InAs as the well material, a suitable barrier material is necessary. The commonly used Al(As)Sb material, though enabling excellent results for mid-infrared (MIR) devices [2][3][4][5], requires the use of monolayer and sub-monolayer thin barriers for devices designed to emit in the terahertz (THz) regime, due to its very high conduction band offset. The growth of such thin layers is very difficult to control, and to date, no THz laser operation has been shown.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers

et al. 2016

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Abstract:This work provides a detailed study on the growth of Al x In 1-x As y Sb 1-y lattice-matched to InAs by Molecular Beam Epitaxy. In order to find the conditions which lead to high crystal quality deep within the miscibility gap, Al x In 1-x As y Sb 1-y with x = 0.462 was grown at different growth temperatures as well as As 2 and Sb 2 beam equivalent pressures. The crystal quality of the grown layers was examined by high-resolution X-ray diffraction and atomic force microscopy. It was found that the incorporation of Sb into Al 0.462 In 0.538 As y Sb 1-y is strongly temperature-dependent and reduced growth temperatures are necessary in order to achieve significant Sb mole fractions in the grown layers. At 480 • C lattice matching to InAs could not be achieved. At 410 • C lattice matching was possible and high quality films of Al 0.462 In 0.538 As y Sb 1-y were obtained.

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Room temperature operation of InAs∕AlSb quantum cascade lasers

Cited by 85 publications

References 10 publications

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

InAs/AlAsSb based quantum cascade detector

Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers

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