1996
DOI: 10.1063/1.116004
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Room-temperature operation of an Yb-doped Gd3Ga5O12 buried channel waveguide laser at 1.025 μm wavelength

Abstract: An epitaxially grown ytterbium-doped gadolinium gallium garnet (Yb:GGG) buried channel waveguide laser is prepared on an yttrium substituted GGG substrate (Y:GGG). The effective light guiding structure is obtained as a result of the difference of refractive indices of Yb:GGG and Y:GGG. The Yb:GGG waveguide exhibits single-mode 1.025 μm lasing operation at room temperature. The incident threshold and slope efficiency of the 5-mm-long waveguide laser when pumped at 0.941 μm are 80 mW and 13.4%, respectively.

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Cited by 34 publications
(9 citation statements)
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“…Single crystals of yttrium-aluminum garnet Y 3 Al 5 O 12 (YAG) activated with ytterbium Yb 3+ have attracted the researchers' attention in the last years as high-performance materials for high power diode pumped wave-guide [1,2] and thin-disk lasers [3][4][5]. The main advantages of ytterbium ions in laser gain media in comparison to traditional neodymium ions are: high pump efficiency, low thermal load, wider pumping band, longer upper-state lifetime, and relatively large emission cross sections.…”
Section: Introductionmentioning
confidence: 99%
“…Single crystals of yttrium-aluminum garnet Y 3 Al 5 O 12 (YAG) activated with ytterbium Yb 3+ have attracted the researchers' attention in the last years as high-performance materials for high power diode pumped wave-guide [1,2] and thin-disk lasers [3][4][5]. The main advantages of ytterbium ions in laser gain media in comparison to traditional neodymium ions are: high pump efficiency, low thermal load, wider pumping band, longer upper-state lifetime, and relatively large emission cross sections.…”
Section: Introductionmentioning
confidence: 99%
“…The main limitations of this method are the lack of accurate thickness control and the poor surface uniformity of the layer, which however, can be overcome by polishing. LPE has been extensively used for growth of oxide layers and for waveguide lasers in particular, early work focused on development of rare-earth doped garnet films [66,[68][69][70][71][72][73][74][75].…”
Section: Liquid Phase Epitaxy (Lpe)mentioning
confidence: 99%
“…The main limitations of this method are the lack of accurate thickness control and the poor surface uniformity of the layer, which however, can be overcome by polishing. LPE has been extensively used for growth of oxide layers and for waveguide lasers in particular, early work focused on development of rare-earth doped garnet films [66,[68][69][70][71][72][73][74][75].Research interest in recent years has shifted towards deposition of rare-earth doped double tungstate structures [65,[76][77][78][79][80][81][82][83][84][85], due to a number of favorable properties of these crystals, such as the possibility of doping with high concentrations of rare earth ions and the large emission and absorption cross sections of the latter in this family of crystals. Finally, there is only one report to date on a waveguide laser based on other crystals, namely on YLF:Nd 3+…”
mentioning
confidence: 99%
“…Yb 3 -doped, planar, waveguide lasers have been fabricated in YAG by epitaxial growth [22] and by ion implantation [23]. Yb 3 -doped, channel, waveguide lasers have also been reported in gadolinium gallium garnet [24] and lithium niobate [25]. In addition, low-power, all-optical, switching devices have been demonstrated in Yb 3 -doped optical fibers [26] and planar waveguides [27] based on pump-induced resonant nonlinearities at 1301 and 1545 nm.…”
Section: Introductionmentioning
confidence: 99%