Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime

Iwasaki, Takuya; Nakamura, Shu; Agbonlahor, Osazuwa G.; Muruganathan, Manoharan; Akabori, Masashi; Morita, Yoshifumi; Moriyama, Satoshi; Ogawa, Satoshi; Wakayama, Yutaka; Mizuta, Hiroshi; Nakaharai, Shu

doi:10.1016/j.carbon.2020.12.076

Cited by 7 publications

(6 citation statements)

References 39 publications

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“…For example, Reza et al 89 found the negative MR effect with a value of −9.0% at a temperature of 5 K in carbon nanotube yarns under an external magnetic field of 5 T, which was related to the weak spin–orbit effect. Takuya et al 90 reported the room-temperature negative MR phenomenon in graphene. Recent research results denote that the semiconducting amorphous carbon could delineate a large MR effect coming from its variable band gaps and electrical properties.…”

Section: Electronic Applications Of Phthalonitrile Resinsmentioning

confidence: 99%

An overview of high-performance phthalonitrile resins: fabrication and electronic applications

Gao

et al. 2022

J. Mater. Chem. C

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Section: Electronic Applications Of Phthalonitrile Resinsmentioning

confidence: 99%

An overview of high-performance phthalonitrile resins: fabrication and electronic applications

Gao

et al. 2022

J. Mater. Chem. C

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“…The carrier localization of helium-ion-irradiated graphene was systematically investigated by measuring the electrical resistance and its dependence on the carrier density, magnetic field, temperature and ion dose [41]. Monolayer graphene devices were fabricated using the conventional process, including the mechanical exfoliation method and electron beam lithography.…”

Section: Carrier Localization In Helium-ion-irradiated Graphenementioning

confidence: 99%

“…The VRH fitting analysis shows that the localization length decreases with an increased dose, as shown in figure 4(b). This modulation could be associated with an interval distance (d) between point defects.We derive d by considering the scattering probability of helium ions with carbon atoms in graphene [38,41].…”

Section: Carrier Localization In Helium-ion-irradiated Graphenementioning

confidence: 99%

Electron transport tuning of graphene by helium ion irradiation

et al. 2022

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This article reviews charge carrier transport phenomena in single-layer graphene, which generates crystalline defects through helium-ion-beam irradiation using a helium-ion microscope. Crystalline defects act as electron scatterers, and the conductivity decays drastically with increase in ion dose. Real-time conductivity monitoring during ion beam scans over the graphene surface is also presented. Negative magnetoresistance is observed in defective graphene in cryogenic measurements under magnetic fields, suggesting that strong localisation occurred in this two-dimensional electron system, which survived even at room temperature. The localised state also contributes to inducing a transport gap around the Dirac point, where the density of states is at its minimum, and it enables field-effect control of the carrier transport by tuning the carrier density. The fabrication and operation of field-effect transistors with defective graphene channels are also demonstrated.

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“…In the weak B limit, as discussed in Ref. [15][16][17], Anderson localization effects due to impurity scatterings can play a role generally in graphene. Here geometric effects due to boundary scattering can be overlapped.…”

Section: 'Plain' Blg (Without Superlattice Structure/'satellites') 8)mentioning

confidence: 99%

“…An interplay of several characteristic times is crucial to fix the magnitude of such quantum interference effects. [15][16][17] For the strong B region, the magnetoresistance is non-monotonically changed with decreasing n (increasing the hole density) due to the overlap with the spectrum from the hole-side satellite, in contrast to that in the BLG device shown in Fig. 2(g).…”

Section: 'Plain' Blg (Without Superlattice Structure/'satellites') 8)mentioning

confidence: 99%

Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices

Iwasaki

Morita

Nakaharai

et al. 2020

Appl. Phys. Express

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Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth and van Hove singularities. In the moiré superlattice devices, we can therefore access the higher-generation Dirac points by in-situ gate tuning. This study is based on our previous paper (Appl. Phys. Express 13, 035003 (2020)). Here we show more extended data by applying high magnetic fields up to ~24 T. We also comment on the temperature dependence of the resistivity and magnetoresistance with reference to the 'plain' BLG data for a comparative study.

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Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime

Cited by 7 publications

References 39 publications

An overview of high-performance phthalonitrile resins: fabrication and electronic applications

An overview of high-performance phthalonitrile resins: fabrication and electronic applications

Electron transport tuning of graphene by helium ion irradiation

Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices

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