Room temperature negative differential capacitance in self-assembled quantum dots

Ilchenko, V. V.; Marin, V. V.; Lin, Sheng-Di; Panarin, K. Y.; Buyanin, A. A.; Tretyak, O. V.

doi:10.1088/0022-3727/41/23/235107

Cited by 13 publications

(7 citation statements)

References 11 publications

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“…In the ideal case, the capacitance of metal-semiconductor (MS) or metal-insulator-semiconductor (MIS) structures is usually frequency independent, especially at high frequency limits (f P 1 MHz), and shows an increase with increasing forward bias voltage [1][2][3][4][5][6][7][8][9]. However, this saturation is different at low and intermediate frequencies and temperatures especially in the depletion and accumulation regions, which is due to the series resistance (R s ) of the device, interface states (N ss ), interfacial insulator layer, and surface charges [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…However, this saturation is different at low and intermediate frequencies and temperatures especially in the depletion and accumulation regions, which is due to the series resistance (R s ) of the device, interface states (N ss ), interfacial insulator layer, and surface charges [6][7][8][9][10][11][12][13]. The performance and reliability of these devices are especially dependent on the formation barrier height at the M/S interface, R s of devices, doping concentration, and N ss [6][7][8][9][10][11][12][13][14][15][16]. In addition, the change in temperature has very important effects on the determination of such devices' parameters [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan

Şafak

Altındal

et al. 2010

Journal of Non-Crystalline Solids

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a b s t r a c tThe temperature dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures were investigated by considering the series resistance (R s ) effect in the temperature range of 80-390 K. The experimental results show that the values of C and G/x are strongly functioning of temperature and bias voltage. The values of C cross at a certain forward bias voltage point ($2.8 V) and then change to negative values for each temperature, which is known as negative capacitance (NC) behavior. In order to explain the NC behavior, we drawn the C vs I and G/x vs I plots for various temperatures at the same bias voltage. The negativity of the C decreases with increasing temperature at the forward bias voltage, and this decrement in the NC corresponds to the increment of the conductance. When the temperature was increased, the value of C decreased and the intersection point shifted towards the zero bias direction. This behavior of the C and G/x values can be attributed to an increase in the polarization and the introduction of more carriers in the structure. R s values increase with increasing temperature. Such temperature dependence is in obvious disagreement with the negative temperature coefficient of R or G reported in the literature. The intersection behavior of C-V curves and the increase in R s with temperature can be explained by the lack of free charge carriers, especially at low temperatures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan

Şafak

Altındal

et al. 2010

Journal of Non-Crystalline Solids

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“…The voltage ranges of these plateaus are longer for structures with C 60 -DT. Such plateau in high-frequency C-V dependencies is an evidence of the capture/escape of current carriers in a quantum well [11] or quantum dots [12]. Perhaps, in our case these ones may be the centers of capture caused by oxygen in C 60 .…”

Section: Resultsmentioning

confidence: 62%

Electrical properties of Au/C<inf>60</inf>/n-Si photodiode structures with pristine and dithioloctane-functionalized C<inf>60</inf> nanolayers

Dmitruk

Borkovskaya

Naumenko

et al. 2010

2010 27th International Conference on Microelectronics Proceedings

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The dithioloctane-treatment of C 60 film was shown to ensure the deposition on it of gold nanoparticles with the controlled size and shape leading to enhancement of the Au/C 60 /n-Si structure photocurrent due to the excitation of local plasmons in metal nanoparticles. In this work the detailed investigation of the electrical properties of these structures with the pristine and dithioloctane-treated C 60 interlayers was made. The current-voltage and capacitance-voltage dependencies were measured in the temperature range from 80 to 320 K. The mechanisms of the current flow and their parameters were determined. It was shown, that the used of dithioloctane-treatment of C 60 layer did not change the mechanisms of the in current flow in Au/C 60 /n-Si structure, specifically, in a decrease of the series resistance, determined by C 60 layer, and in a decrease of the effective height of barrier for the reverse current flow.

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“…The quality of the insulating / organic / ferroelectric layer between the semiconductor surface and the metal semiconductors also significantly affects the diode performance. Attention should be paid to the choice of materials with a high dielectric constant, a surface passivation, controlled current conduction mechanism, and the least leakage current as the interface layer [8,9]. The materials with these properties are SiO2, TiO2, SnO2 and Si3N4 for insulating materials, and poly-indole, poly-aniline and polyvinyl alcohol (PVA) for organic materials which has been subjected to many studies in chemistry [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

The Analysis of The Researches on Metal- Semiconductor Structures with and without Interfacial Layer in Turkey

Tan

2019

Hittite J. Sci. Eng.

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M etal-semiconductor (MS) or Schottky structures, which form the basis of semiconductor base circuit elements, formed by the tight contact of metal and semiconductors instead of a semiconductor-semiconductor junction as in typical diodes constructed by p-type and n-type semiconductors (PN junction) in contact. In metal-semiconductor structures, typically used metals are gold (Au), silver (Ag), platinum (Pt), tungsten (W), aluminium (Al) and molybdenum (Mo) and semiconductors are gallium arsenide (GaAs), zinc selenide (ZnSe), cadmium telluride (CdTe) besides mostly used Silicon (Si). These structures can respond quickly to the transitions between conductivity and insulator states at high frequencies and become widespread in production and use in the semiconductor industry due to their significant advantages. The voltage drops across PN and Schottky junctions are approximately between 0.6

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Room temperature negative differential capacitance in self-assembled quantum dots

Cited by 13 publications

References 11 publications

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Electrical properties of Au/C<inf>60</inf>/n-Si photodiode structures with pristine and dithioloctane-functionalized C<inf>60</inf> nanolayers

The Analysis of The Researches on Metal- Semiconductor Structures with and without Interfacial Layer in Turkey

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