“…Magnetoelectric (ME) coupling originates due to the coupling between FE and FM ordering parameters, where polarization ( P ) can be switched and/or tuned by a magnetic field ( H ) and magnetization ( M ) can be manipulated and/or switched via an electric field ( E ) [ 2 , 6 , 9 , 10 ]. ME-MF materials are rich in fundamental physics and they have great potential for applications in novel devices, such as ultra-low power and highly dense logic-memory, radio- and high-frequency, micro(nano) electronic, sensors, energy harvesting, actuators, spintronics, miniature antennas, terahertz emitters, electric-field controlled FM resonance, and other multifunctional devices [ 2 , 4 , 6 , 7 , 9 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. The coexistence of electric polarization and magnetization in a single-phase makes them suitable for multistate memory devices, as P and M are used to encode binary information in FRAM (FE random-access memories) and MRAM (magnetic random-access memories), respectively [ 5 , 13 , 16 , 18 , 19 , 20 ].…”