2020
DOI: 10.1063/5.0004480
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Room temperature multiferroicity and magnetodielectric coupling in 0–3 composite thin films

Abstract: Magnetoelectric (ME) composite thin films are promising candidates for novel applications in future nanoelectronics, spintronics, memory, and other multifunctional devices as they exhibit much higher ME coupling and transition temperatures (Tc) than well-known single phase multiferroics discovered to date. Among the three types of multiferroic composite nanostructures, (2–2) layered and (1–3) vertically aligned composite nanostructures exhibit comparatively smaller ME coupling due to different shortcomings tha… Show more

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Cited by 17 publications
(16 citation statements)
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“…It should be noted that the piezoelectric effect is a linear change of polarization as a function of applied stress or change in strain as a function of E , whereas electrostriction is a quadradic change of strain with applied E [ 1 , 2 ]. This coupling is called direct ME coupling [ 17 , 32 ]. In this case, the coupling takes place via mechanical strain transmission (which is an elastic interaction) between the FE and magnetic phases [ 2 ].…”
Section: Me Effectmentioning
confidence: 99%
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“…It should be noted that the piezoelectric effect is a linear change of polarization as a function of applied stress or change in strain as a function of E , whereas electrostriction is a quadradic change of strain with applied E [ 1 , 2 ]. This coupling is called direct ME coupling [ 17 , 32 ]. In this case, the coupling takes place via mechanical strain transmission (which is an elastic interaction) between the FE and magnetic phases [ 2 ].…”
Section: Me Effectmentioning
confidence: 99%
“…Magnetoelectric (ME) coupling originates due to the coupling between FE and FM ordering parameters, where polarization ( P ) can be switched and/or tuned by a magnetic field ( H ) and magnetization ( M ) can be manipulated and/or switched via an electric field ( E ) [ 2 , 6 , 9 , 10 ]. ME-MF materials are rich in fundamental physics and they have great potential for applications in novel devices, such as ultra-low power and highly dense logic-memory, radio- and high-frequency, micro(nano) electronic, sensors, energy harvesting, actuators, spintronics, miniature antennas, terahertz emitters, electric-field controlled FM resonance, and other multifunctional devices [ 2 , 4 , 6 , 7 , 9 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. The coexistence of electric polarization and magnetization in a single-phase makes them suitable for multistate memory devices, as P and M are used to encode binary information in FRAM (FE random-access memories) and MRAM (magnetic random-access memories), respectively [ 5 , 13 , 16 , 18 , 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%
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